PSMN2R0-30YLD
N-channel 30 V, 2.0 mΩ logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
25 October 2018
Prod...
PSMN2R0-30YLD
N-channel 30 V, 2.0 mΩ logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
25 October 2018
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “
SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated
Schottky or
Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
2. Features and benefits
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “
SchottkyPlus” technology;
Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistanc...