N-channel MOSFET. PSMN2R0-30YLE Datasheet

PSMN2R0-30YLE MOSFET. Datasheet pdf. Equivalent

PSMN2R0-30YLE Datasheet
Recommendation PSMN2R0-30YLE Datasheet
Part PSMN2R0-30YLE
Description N-channel MOSFET
Feature PSMN2R0-30YLE; PSMN2R0-30YLE N-channel 30 V 2 mΩ logic level MOSFET in LFPAK 12 October 2012 Product data sheet .
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Datasheet
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nexperia PSMN2R0-30YLE
PSMN2R0-30YLE
N-channel 30 V 2 mΩ logic level MOSFET in LFPAK
12 October 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
Enhanced forward biased safe operating area for superior linear mode operation
Very low Rdson for low conduction losses
1.3 Applications
Electronic fuse
Hot swap
Load switch
Soft start
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 12
Dynamic characteristics
QGD
gate-drain charge
VGS = 4.5 V; ID = 25 A; VDS = 15 V;
Fig. 14; Fig. 15
QG(tot)
total gate charge
VGS = 10 V; ID = 25 A; VDS = 15 V;
Fig. 14; Fig. 15
Min Typ Max Unit
- - 30 V
[1] - - 100 A
- - 272 W
-
1.7 2
- 3 3.5 mΩ
- 13.8 - nC
- 87 - nC



nexperia PSMN2R0-30YLE
Nexperia
PSMN2R0-30YLE
N-channel 30 V 2 mΩ logic level MOSFET in LFPAK
Symbol
Parameter
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
Conditions
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ≤ 30 V; unclamped; RGS = 50 Ω;
Fig. 3
[1] Capped at 100A due to package
Min Typ Max Unit
- - 370 mJ
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G
mb D
gate
mounting base; connected to
drain
1234
LFPAK; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN2R0-30YLE
LFPAK;
Power-SO8
Description
plastic single-ended surface-mounted package; 4 leads
Version
SOT669
4. Marking
Table 4. Marking codes
Type number
PSMN2R0-30YLE
Marking code
2R030
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ
VGS
PSMN2R0-30YLE
gate-source voltage
All information provided in this document is subject to legal disclaimers.
Product data sheet
12 October 2012
Min Max Unit
- 30 V
- 30 V
-20 20
V
© Nexperia B.V. 2017. All rights reserved
2 / 13



nexperia PSMN2R0-30YLE
Nexperia
PSMN2R0-30YLE
N-channel 30 V 2 mΩ logic level MOSFET in LFPAK
Symbol
ID
Parameter
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
VGS = 10 V; Tmb = 100 °C; Fig. 1
VGS = 10 V; Tmb = 25 °C; Fig. 1
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
Tmb = 25 °C; Fig. 2
[1]
[1]
Tmb = 25 °C
pulsed; tp ≤ 10 µs; Tmb = 25 °C
[1]
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ≤ 30 V; unclamped; RGS = 50 Ω;
Fig. 3
[1] Capped at 100A due to package
300
ID
(A)
003aah010
120
Pder
(%)
200 80
Min Max Unit
- 100 A
- 100 A
- 1084 A
- 272 W
-55 175 °C
-55 175 °C
- 260 °C
- 100 A
- 1084 A
- 370 mJ
03aa16
100
(1)
40
0
0 50 100 150 200
Tmb(°C)
(1) Capped at 100A due to package
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0 50 100 150 200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN2R0-30YLE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 October 2012
© Nexperia B.V. 2017. All rights reserved
3 / 13







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