PSMN2R0-25MLD

PSMN2R0-25MLD N-channel 25 V, 2.1 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 8 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2. Features and benefits Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resista...