N-channel MOSFET. PSMN1R5-30YLC Datasheet

PSMN1R5-30YLC MOSFET. Datasheet pdf. Equivalent

PSMN1R5-30YLC Datasheet
Recommendation PSMN1R5-30YLC Datasheet
Part PSMN1R5-30YLC
Description N-channel MOSFET
Feature PSMN1R5-30YLC; PSMN1R5-30YLC N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 .
Manufacture nexperia
Datasheet
Download PSMN1R5-30YLC Datasheet




nexperia PSMN1R5-30YLC
PSMN1R5-30YLC
N-channel 30 V 1.55mlogic level MOSFET in LFPAK using
NextPower technology
Rev. 2 — 17 May 2011
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High reliability Power SO8 package,
qualified to 175°C
„ Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
„ Ultra low QG, QGD, and QOSS for
high system efficiencies at low and
high loads
„ Ultra low Rdson and low parasitic
inductance
1.3 Applications
„ DC-to-DC converters
„ Lithium-ion battery protection
„ Load switching
„ Power OR-ing
„ Server power supplies
„ Sync rectifier
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
drain-source
voltage
Conditions
25 °C Tj 175 °C
Min Typ Max Unit
- - 30 V
ID
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
[1] - - 100 A
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 179 W
Tj junction
temperature
-55 -
175 °C
Static characteristics
RDSon
drain-source
VGS = 4.5 V; ID = 25 A; Tj = 25 °C; - 1.65 2.05 m
on-state resistance see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 12
- 1.3 1.55 m



nexperia PSMN1R5-30YLC
Nexperia
PSMN1R5-30YLC
N-channel 30 V 1.55mlogic level MOSFET in LFPAK using NextPower
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Dynamic characteristics
QGD
gate-drain charge VGS = 4.5 V; ID = 25 A;
VDS = 15 V; see Figure 14;
see Figure 15
QG(tot)
total gate charge
VGS = 4.5 V; ID = 25 A;
VDS = 15 V; see Figure 14;
see Figure 15
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit
- 8.6 - nC
- 30 - nC
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S source
S source
S source
G gate
D mounting base; connected to drain
Simplified outline
mb
Graphic symbol
D
1234
SOT669 (LFPAK; Power-SO8)
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN1R5-30YLC LFPAK; Power-SO8
4. Marking
Description
plastic single-ended surface-mounted package; 4 leads
Version
SOT669
Table 4. Marking codes
Type number
PSMN1R5-30YLC
[1] % = placeholder for manufacturing site code
Marking code[1]
1C530L
PSMN1R5-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 May 2011
© Nexperia B.V. 2017. All rights reserved
2 of 15



nexperia PSMN1R5-30YLC
Nexperia
PSMN1R5-30YLC
N-channel 30 V 1.55mlogic level MOSFET in LFPAK using NextPower
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
25 °C Tj 175 °C
25 °C Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 25 °C; see Figure 1
VGS = 10 V; Tmb = 100 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 4
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
VESD
electrostatic discharge voltage
Source-drain diode
Tmb = 25 °C; see Figure 2
MM (JEDEC JESD22-A115)
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup 30 V; RGS = 50 ; unclamped;
see Figure 3
Min
-
-
-20
[1] -
[1] -
-
Max
30
30
20
100
100
1008
Unit
V
V
V
A
A
A
-
-55
-55
-
1000
179
175
175
260
-
W
°C
°C
°C
V
[1] -
-
100 A
1008 A
- 147 mJ
[1] Continuous current is limited by package.
300
ID
(A)
240
180
003a a f644
120
Pder
(%)
80
03na19
120
60
(1)
40
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN1R5-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 May 2011
© Nexperia B.V. 2017. All rights reserved
3 of 15







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