N-channel MOSFET. PSMN1R1-30EL Datasheet

PSMN1R1-30EL MOSFET. Datasheet pdf. Equivalent

PSMN1R1-30EL Datasheet
Recommendation PSMN1R1-30EL Datasheet
Part PSMN1R1-30EL
Description N-channel MOSFET
Feature PSMN1R1-30EL; PSMN1R1-30EL N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK 2 April 2014 Product data sheet 1.
Manufacture nexperia
Datasheet
Download PSMN1R1-30EL Datasheet




nexperia PSMN1R1-30EL
PSMN1R1-30EL
N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK
2 April 2014
Product data sheet
1. General description
Logic level N-channel MOSFET in I2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
High efficiency due to low switching and conduction losses
Suitable for logic level gate drive sources
3. Applications
DC-to-DC converters
Load switiching
Motor control
Server power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Tj junction temperature
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 4.5 V; ID = 75 A; VDS = 15 V;
Fig. 14; Fig. 15
Min Typ Max Unit
- - 30 V
[1] - - 120 A
- - 338 W
-55 -
175 °C
[2] -
-
1.1 1.3 mΩ
1.5 1.8 mΩ
- 37 - nC
- 118 - nC



nexperia PSMN1R1-30EL
Nexperia
PSMN1R1-30EL
N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK
Symbol
Parameter
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
Conditions
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 30 V; RGS = 50 Ω; unclamped
[1] Continuous current is limited by package.
[2] Measured 3 mm from package.
Min Typ Max Unit
- - 1.9 J
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 G gate
mb
2 D drain
3 S source
mb D
mounting base; connected to
drain
Graphic symbol
D
G
mbb076 S
123
I2PAK (SOT226)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN1R1-30EL
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
Version
SOT226
7. Marking
Table 4. Marking codes
Type number
PSMN1R1-30EL
Marking code
PSMN1R1-30EL
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
PSMN1R1-30EL
All information provided in this document is subject to legal disclaimers.
Product data sheet
2 April 2014
Min Max Unit
- 30 V
- 30 V
© Nexperia B.V. 2017. All rights reserved
2 / 13



nexperia PSMN1R1-30EL
Nexperia
PSMN1R1-30EL
N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK
Symbol
VGS
Ptot
ID
Parameter
gate-source voltage
total power dissipation
drain current
IDM peak drain current
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tmb = 25 °C; Fig. 1
VGS = 10 V; Tmb = 100 °C; Fig. 2
VGS = 10 V; Tmb = 25 °C; Fig. 2
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
[1]
[1]
Tmb = 25 °C
pulsed; tp ≤ 10 µs; Tmb = 25 °C
[1]
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 30 V; RGS = 50 Ω; unclamped
[1] Continuous current is limited by package.
120
Pder
(%)
80
03aa16
500
ID
(A)
400
300
Min Max Unit
-20 20
V
- 338 W
- 120 A
- 120 A
- 1609 A
-55 175 °C
-55 175 °C
- 260 °C
- 120 A
- 1609 A
- 1.9 J
003a a f774
200
40
(1)
100
0
0 50 100 150 200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
0
0 50 100 150 200
Tmb ( C)
Fig. 2. Continuous drain current as a function of
mounting base temperature.
PSMN1R1-30EL
Product data sheet
All information provided in this document is subject to legal disclaimers.
2 April 2014
© Nexperia B.V. 2017. All rights reserved
3 / 13







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)