N-channel MOSFET. PSMN1R6-30MLH Datasheet

PSMN1R6-30MLH MOSFET. Datasheet pdf. Equivalent

PSMN1R6-30MLH Datasheet
Recommendation PSMN1R6-30MLH Datasheet
Part PSMN1R6-30MLH
Description N-channel MOSFET
Feature PSMN1R6-30MLH; PSMN1R6-30MLH N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 techno.
Manufacture nexperia
Datasheet
Download PSMN1R6-30MLH Datasheet




nexperia PSMN1R6-30MLH
PSMN1R6-30MLH
N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in
LFPAK33 using NextPowerS3 technology
29 November 2018
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.
NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A
and optimized for DC load switch and hot-swap applications.
2. Features and benefits
Optimized for low RDSon
Low leakage < 1 µA at 25 °C
Low spiking and ringing for low EMI designs
Optimized for 4.5 V gate drive
160 A rated
High reliability copper-clip bonded and solder die attach LFPAK33 package
Qualified to 175 °C
Exposed leads for optimal visual solder inspection
3. Applications
DC switch / load switch
USB-PD and fast-charge
Battery protection
OR-ing and hot-swap
Synchronous rectifier in AC-DC and DC-DC applications
Brushed and BLDC (brushless) motor control
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
gate-drain charge
Conditions
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
Tmb = 25 °C; Fig. 1
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 10
ID = 25 A; VDS = 15 V; VGS = 4.5 V;
Fig. 12; Fig. 13
Min Typ Max Unit
- - 30 V
[1] - - 160 A
- - 106 W
-55 -
175 °C
- 1.6 1.9 mΩ
- 2 2.6 mΩ
- 7 14 nC



nexperia PSMN1R6-30MLH
Nexperia
PSMN1R6-30MLH
N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology
Symbol
QG(tot)
Parameter
total gate charge
Source-drain diode
S softness factor
Conditions
ID = 25 A; VDS = 15 V; VGS = 10 V;
Fig. 12; Fig. 13
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 15 V; Fig. 16
Min Typ Max Unit
- 41 68 nC
- 0.7 -
[1] 160A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
2 S source
3 S source
4 G gate
mb D
mounting base; connected to
drain
1234
LFPAK33
(SOT1210)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN1R6-30MLH
LFPAK33
Description
Plastic single ended surface mounted package (LFPAK33); 8
leads
Version
SOT1210
7. Marking
Table 4. Marking codes
Type number
PSMN1R6-30MLH
Marking code
1H630L
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
Ptot
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
drain current
Conditions
25 °C ≤ Tj ≤ 175 °C
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
Tmb = 25 °C; Fig. 1
VGS = 10 V; Tmb = 25 °C; Fig. 2
VGS = 10 V; Tmb = 100 °C; Fig. 2
Min Max Unit
- 30 V
- 30 V
-20 20
V
- 106 W
[1] -
160 A
- 116 A
PSMN1R6-30MLH
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 November 2018
© Nexperia B.V. 2018. All rights reserved
2 / 12



nexperia PSMN1R6-30MLH
Nexperia
PSMN1R6-30MLH
N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology
Symbol
Parameter
Conditions
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering
temperature
Source-drain diode
IS
source current
Tmb = 25 °C
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
ID = 25 A; Vsup ≤ 30 V; RGS = 50 Ω;
source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped;
tp = 797 µs
IAS non-repetitive avalanche Vsup ≤ 30 V; VGS = 10 V; Tj(init) = 25 °C;
current
RGS = 50 Ω
[2]
[2]
Min Max Unit
- 656 A
-55 175 °C
-55 175 °C
- 260 °C
- 88 A
- 656 A
- 388 mJ
- 87 A
[1] 160A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
[2] Protected by 100% test
120
Pder
(%)
80
03aa16
200
ID
(A)
150
(1)
aaa-028001
100
40
50
0
0 50 100 150 200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
0
0 25 50 75 100 125 150 175 200
Tmb (°C)
VGS ≥ 10 V
(1) 160A continuous current has been successfully
demonstrated during application tests. Practically
the current will be limited by PCB, thermal design
and operating temperature.
Fig. 2. Continuous drain current as a function of
mounting base temperature
PSMN1R6-30MLH
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 November 2018
© Nexperia B.V. 2018. All rights reserved
3 / 12







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