N-channel MOSFET. PSMN1R6-30PL Datasheet

PSMN1R6-30PL MOSFET. Datasheet pdf. Equivalent

PSMN1R6-30PL Datasheet
Recommendation PSMN1R6-30PL Datasheet
Part PSMN1R6-30PL
Description N-channel MOSFET
Feature PSMN1R6-30PL; PSMN1R6-30PL N-channel 30 V 1.7 mΩ logic level MOSFET Rev. 02 — 25 June 2009 Product data sheet .
Manufacture nexperia
Datasheet
Download PSMN1R6-30PL Datasheet




nexperia PSMN1R6-30PL
PSMN1R6-30PL
N-channel 30 V 1.7 mlogic level MOSFET
Rev. 02 — 25 June 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for logic level gate drive
sources
1.3 Applications
„ DC-to-DC converters
„ Load switiching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj 25 °C; Tj 175 °C
- - 30 V
ID drain current
Tmb = 25 °C; VGS = 10 V; [1] - - 100 A
see Figure 1;
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 306 W
Dynamic characteristics
QGD
gate-drain charge VGS = 4.5 V; ID = 25 A;
VDS = 15 V; see Figure 14;
see Figure 15
- 27 - nC
QG(tot) total gate charge
Static characteristics
VGS = 4.5 V; ID = 25 A;
VDS = 15 V; see Figure 14
- 101 - nC
RDSon
drain-source
VGS = 10 V; ID = 25 A;
on-state resistance Tj = 25 °C;
[2] -
1.4 1.7 m
[1] Continuous current is limited by package.
[2] Measured 3 mm from package.



nexperia PSMN1R6-30PL
Nexperia
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1G
gate
2D
drain
3S
source
mb D
mounting base; connected to
drain
PSMN1R6-30PL
N-channel 30 V 1.7 mlogic level MOSFET
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78
(TO-220AB; SC-46)
Table 3. Ordering information
Type number
Package
Name
Description
Version
PSMN1R6-30PL TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
SC-46
TO-220AB
PSMN1R6-30PL_2
Product data sheet
Rev. 02 — 25 June 2009
© Nexperia B.V. 2017. All rights reserved
2 of 13



nexperia PSMN1R6-30PL
Nexperia
PSMN1R6-30PL
N-channel 30 V 1.7 mlogic level MOSFET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1;
VGS = 10 V; Tmb = 25 °C; see Figure 1;
tp 10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
Min Max Unit
- 30 V
- 30 V
-20 20
V
[1] -
100 A
[1] -
100 A
- 1268 A
- 306 W
-55 175 °C
-55 175 °C
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source avalanche
energy
Tmb = 25 °C;
tp 10 µs; pulsed; Tmb = 25 °C
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup 30 V;
RGS = 50 ; unclamped
[1]
-
-
-
100 A
1268 A
1.7 J
[1] Continuous current is limited by package.
400
ID
(A)
300
200
100
(1)
003aad003
120
Pder
(%)
80
40
03aa16
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN1R6-30PL_2
Product data sheet
Rev. 02 — 25 June 2009
© Nexperia B.V. 2017. All rights reserved
3 of 13







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