N-channel MOSFET. PSMN4R3-30BL Datasheet

PSMN4R3-30BL MOSFET. Datasheet pdf. Equivalent

PSMN4R3-30BL Datasheet
Recommendation PSMN4R3-30BL Datasheet
Part PSMN4R3-30BL
Description N-channel MOSFET
Feature PSMN4R3-30BL; PSMN4R3-30BL N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK Rev. 1 — 22 March 2012 Product dat.
Manufacture nexperia
Datasheet
Download PSMN4R3-30BL Datasheet




nexperia PSMN4R3-30BL
PSMN4R3-30BL
N-channel 30 V 4.1 mlogic level MOSFET in D2PAK
Rev. 1 — 22 March 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
Conditions
Min Typ Max Unit
Tj 25 °C; Tj 175 °C
- - 30 V
Tmb = 25 °C; VGS = 10 V; see Figure 1 [1] - - 100 A
Tmb = 25 °C; see Figure 2
- - 103 W
-55 -
175 °C
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 12; see Figure 13
- 4.9 5.8 m
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 13
- 3.5 4.1 m
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
VGS = 4.5 V; ID = 15 A; VDS = 15 V;
see Figure 14; see Figure 15
- 5 - nC
- 19 - nC
EDS(AL)S
non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
avalanche energy
Vsup 30 V; RGS = 50 ; unclamped
- - 74 mJ
[1] Continuous current is limited by package.



nexperia PSMN4R3-30BL
Nexperia
PSMN4R3-30BL
N-channel 30 V 4.1 mlogic level MOSFET in D2PAK
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain[1]
S source
D mounting base; connected to drain
Simplified outline
mb
2
13
SOT404 (D2PAK)
[1] It is not possible to make connection to pin 2
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN4R3-30BL
D2PAK
4. Marking
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Table 4. Marking codes
Type number
PSMN4R3-30BL
Marking code
PSMN4R3-30BL
PSMN4R3-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© Nexperia B.V. 2017. All rights reserved
2 of 15



nexperia PSMN4R3-30BL
Nexperia
PSMN4R3-30BL
N-channel 30 V 4.1 mlogic level MOSFET in D2PAK
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
Min
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
-
-
-20
VGS = 10 V; Tmb = 100 °C; see Figure 1 [1] -
VGS = 10 V; Tmb = 25 °C; see Figure 1 [1] -
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 3
-
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
-
-55
-55
-
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
[1] -
-
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup 30 V; RGS = 50 ; unclamped
-
[1] Continuous current is limited by package.
Max Unit
30 V
30 V
20 V
80 A
100 A
465 A
103 W
175 °C
175 °C
260 °C
100 A
465 A
74 mJ
150
ID
(A)
100
(1)
003aad235
120
Pder
(%)
80
03aa16
50 40
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN4R3-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© Nexperia B.V. 2017. All rights reserved
3 of 15







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