N-channel MOSFET. PSMN026-80YS Datasheet

PSMN026-80YS MOSFET. Datasheet pdf. Equivalent

PSMN026-80YS Datasheet
Recommendation PSMN026-80YS Datasheet
Part PSMN026-80YS
Description N-channel MOSFET
Feature PSMN026-80YS; PSMN026-80YS N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET Rev. 01 — 25 June 2009 Product da.
Manufacture nexperia
Datasheet
Download PSMN026-80YS Datasheet




nexperia PSMN026-80YS
PSMN026-80YS
N-channel LFPAK 80 V 27.5 mstandard level MOSFET
Rev. 01 — 25 June 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ Advanced TrenchMOS provides low
RDSon and low gate charge
„ High efficiency gains in switching
power converters
„ Improved mechanical and thermal
characteristics
„ LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
„ DC-to-DC converters
„ Lithium-ion battery protection
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
VGS = 10 V; Tj(init) = 25 °C;
ID = 31 A; Vsup 80 V;
RGS = 50 ; unclamped
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A;
VDS = 40 V; see Figure 14;
see Figure 15
Min Typ Max Unit
- - 80 V
- - 34 A
- - 74 W
-55 -
175 °C
- - 32 mJ
- 5 - nC
- 20 - nC



nexperia PSMN026-80YS
Nexperia
PSMN026-80YS
N-channel LFPAK 80 V 27.5 mstandard level MOSFET
Table 1. Quick reference …continued
Symbol Parameter
Conditions
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 5 A;
Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 5 A;
Tj = 25 °C; see Figure 13
Min Typ Max Unit
- - 42 m
- 20 27.5 m
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1S
source
2S
source
3S
source
4G
gate
mb D
mounting base; connected to
drain
3. Ordering information
Simplified outline
mb
1234
SOT669
(LFPAK)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
Description
PSMN026-80YS LFPAK
plastic single-ended surface-mounted package (LFPAK); 4 leads
Version
SOT669
PSMN026-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
© Nexperia B.V. 2017. All rights reserved
2 of 14



nexperia PSMN026-80YS
Nexperia
PSMN026-80YS
N-channel LFPAK 80 V 27.5 mstandard level MOSFET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Ptot
Tstg
Tj
Tsld(M)
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering
temperature
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
tp 10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
Source-drain diode
IS source current Tmb = 25 °C
ISM peak source current tp 10 µs; pulsed; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 31 A; Vsup 80 V;
drain-source avalanche RGS = 50 ; unclamped
energy
Min Max Unit
- 80 V
- 80 V
-20 20
V
- 24 A
- 34 A
- 137 A
- 74 W
-55 175 °C
-55 175 °C
- 260 °C
- 34 A
- 137 A
- 32 mJ
003aad282
40 120
ID
(A) Pder
(%)
30
80
20
40
10
03aa16
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
0
0 50 100 150 200
Tmb (°C)
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN026-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
© Nexperia B.V. 2017. All rights reserved
3 of 14







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