N-channel MOSFET. PSMN027-100PS Datasheet

PSMN027-100PS MOSFET. Datasheet pdf. Equivalent

PSMN027-100PS Datasheet
Recommendation PSMN027-100PS Datasheet
Part PSMN027-100PS
Description N-channel MOSFET
Feature PSMN027-100PS; PSMN027-100PS N-channel 100V 26.8 mΩ standard level MOSFET in TO220 Rev. 3 — 12 September 2011 Pr.
Manufacture nexperia
Datasheet
Download PSMN027-100PS Datasheet




nexperia PSMN027-100PS
PSMN027-100PS
N-channel 100V 26.8 mstandard level MOSFET in TO220
Rev. 3 — 12 September 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
drain-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power dissipation
Tj junction temperature
Static characteristics
Tmb = 25 °C; see Figure 2
RDSon
drain-source on-state
resistance
Dynamic characteristics
VGS = 10 V; ID = 15 A;
Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 15 A;
Tj = 25 °C; see Figure 13
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 30 A;
VDS = 50 V; see Figure 14;
see Figure 15
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C;
avalanche energy
ID = 37 A; Vsup 100 V;
unclamped; RGS = 50
Min Typ Max Unit
- - 100 V
- - 37 A
--
-55 -
103 W
175 °C
- - 48 m
- 21 26.8 m
- 9 - nC
- 30 - nC
- - 59 mJ



nexperia PSMN027-100PS
Nexperia
PSMN027-100PS
N-channel 100V 26.8 mstandard level MOSFET in TO220
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base; connected to drain
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
PSMN027-100PS
TO-220AB
4. Limiting values
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 175 °C; Tj 25 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 37 A;
Vsup 100 V; unclamped; RGS = 50
PSMN027-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 September 2011
Min Max Unit
- 100 V
- 100 V
-20 20 V
- 26 A
- 37 A
- 148 A
- 103 W
-55 175 °C
-55 175 °C
- 260 °C
- 37 A
- 148 A
- 59 mJ
© Nexperia B.V. 2017. All rights reserved
2 of 14



nexperia PSMN027-100PS
Nexperia
PSMN027-100PS
N-channel 100V 26.8 mstandard level MOSFET in TO220
40
ID
(A)
30
003aae041
20
10
0
0 50 100 150 200
Tmb(°C)
120
Pder
(%)
80
03aa16
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
103
ID
(A)
102
Limit RDSon = VDS / ID
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae042
tp = 10 μs
100 μs
1
101
1
DC
10
1 ms
10 ms
100 ms
102
VDS (V)
103
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN027-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 September 2011
© Nexperia B.V. 2017. All rights reserved
3 of 14







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