PSMN3R4-30PL

PSMN3R4-30PL N-channel 30 V 3.4 mΩ logic level MOSFET Rev. 01 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applications „ DC-to-DC converters „ Load switching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Min Typ Max Unit - - 30 V [1] - - 100 A Ptot total power Tmb = 25 °C; see Figure 2 - - 114 W dissipation Tj junction temperature Static characteristics -55 - 175 °C RDSon drain-source on-state VGS = 4.5 V; ID = 10 A;...