N-channel MOSFET. PSMN3R4-30BLE Datasheet

PSMN3R4-30BLE MOSFET. Datasheet pdf. Equivalent

PSMN3R4-30BLE Datasheet
Recommendation PSMN3R4-30BLE Datasheet
Part PSMN3R4-30BLE
Description N-channel MOSFET
Feature PSMN3R4-30BLE; PSMN3R4-30BLE N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK 12 October 2012 Product data shee.
Manufacture nexperia
Datasheet
Download PSMN3R4-30BLE Datasheet




nexperia PSMN3R4-30BLE
PSMN3R4-30BLE
N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK
12 October 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
Enhanced forward biased safe operating area for superior linear mode operation
Very low Rdson for low conduction losses
1.3 Applications
Electronic fuse
Hot swap
Load switch
Soft start
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 12
Dynamic characteristics
QGD
gate-drain charge
VGS = 4.5 V; ID = 25 A; VDS = 15 V;
Fig. 14; Fig. 15
QG(tot)
total gate charge
VGS = 10 V; ID = 25 A; VDS = 15 V;
Fig. 14; Fig. 15
Min Typ Max Unit
- - 30 V
[1] - - 120 A
- - 178 W
- 2.95 3.4 mΩ
-
4.25 5
- 12.2 - nC
- 81 - nC



nexperia PSMN3R4-30BLE
Nexperia
PSMN3R4-30BLE
N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK
Symbol
Parameter
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
Conditions
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 30 V; unclamped; RGS = 50 Ω;
Fig. 3
[1] Capped at 120A due to package
Min Typ Max Unit
- - 246 mJ
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 G gate
mb
2 D drain[1]
3 S source
mb D
mounting base; connected to
drain
2
13
D2PAK (SOT404)
[1] It is not possible to make connection to pin 2.
Graphic symbol
D
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN3R4-30BLE
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
4. Marking
Table 4. Marking codes
Type number
PSMN3R4-30BLE
Marking code
PSMN3R4-30BLE
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ
PSMN3R4-30BLE
All information provided in this document is subject to legal disclaimers.
Product data sheet
12 October 2012
Min Max Unit
- 30 V
- 30 V
© Nexperia B.V. 2017. All rights reserved
2 / 13



nexperia PSMN3R4-30BLE
Nexperia
PSMN3R4-30BLE
N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK
Symbol
VGS
ID
Parameter
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
VGS = 10 V; Tmb = 100 °C; Fig. 1
VGS = 10 V; Tmb = 25 °C; Fig. 1
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
Tmb = 25 °C; Fig. 2
[1]
Tmb = 25 °C
pulsed; tp ≤ 10 µs; Tmb = 25 °C
[1]
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 30 V; unclamped; RGS = 50 Ω;
Fig. 3
[1] Capped at 120A due to package
200
ID
(A)
160
120
(1)
003aaj362
120
Pder
(%)
80
80
40
40
Min Max Unit
-20 20
V
- 119 A
- 120 A
- 672 A
- 178 W
-55 175 °C
-55 175 °C
- 260 °C
- 120 A
- 672 A
- 246 mJ
03aa16
0
0 50 100 150 200
Tmb(°C)
(1) Capped at 120A due to package
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0 50 100 150 200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN3R4-30BLE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 October 2012
© Nexperia B.V. 2017. All rights reserved
3 / 13







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)