N-channel MOSFET. PSMN1R8-40YLC Datasheet

PSMN1R8-40YLC MOSFET. Datasheet pdf. Equivalent

PSMN1R8-40YLC Datasheet
Recommendation PSMN1R8-40YLC Datasheet
Part PSMN1R8-40YLC
Description N-channel MOSFET
Feature PSMN1R8-40YLC; PSMN1R8-40YLC N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology 22 Aug.
Manufacture nexperia
Datasheet
Download PSMN1R8-40YLC Datasheet




nexperia PSMN1R8-40YLC
PSMN1R8-40YLC
N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using
NextPower technology
22 August 2012
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High reliability Power SO8 package, qualified to 175°C
Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
Ultra low Rdson and low parasitic inductance
1.3 Applications
DC-to-DC converters
Load switching
Power OR-ing
Server power supplies
Sync rectifier
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Tj junction temperature
Static characteristics
RDSon
drain-source on-state VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
Dynamic characteristics
QGD
gate-drain charge
VGS = 4.5 V; ID = 25 A; VDS = 20 V;
Fig. 15; Fig. 14
Min Typ Max Unit
- - 40 V
[1] - - 100 A
- - 272 W
-55 -
175 °C
- 1.8 2.1 mΩ
- 1.5 1.8 mΩ
- 10.9 - nC



nexperia PSMN1R8-40YLC
Nexperia
PSMN1R8-40YLC
N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower
technology
Symbol
QG(tot)
Parameter
total gate charge
Conditions
VGS = 4.5 V; ID = 25 A; VDS = 20 V;
Fig. 15; Fig. 14
Min Typ Max Unit
- 45 - nC
[1] Continuous current is limited by package.
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G
mb D
gate
mounting base; connected to
drain
1234
LFPAK; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN1R8-40YLC
LFPAK;
Power-SO8
Description
plastic single-ended surface-mounted package; 4 leads
Version
SOT669
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
VDGR
drain-gate voltage
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
VGS gate-source voltage
ID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
VGS = 10 V; Tmb = 100 °C; Fig. 1
IDM peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
Tstg storage temperature
Tj junction temperature
Tsld(M)
PSMN1R8-40YLC
peak soldering temperature
All information provided in this document is subject to legal disclaimers.
Product data sheet
22 August 2012
[1]
[1]
Min Max Unit
- 40 V
- 40 V
-20 20
V
- 100 A
- 100 A
- 1128 A
- 272 W
-55 175 °C
-55 175 °C
- 260 °C
© Nexperia B.V. 2017. All rights reserved
2 / 14



nexperia PSMN1R8-40YLC
Nexperia
PSMN1R8-40YLC
N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower
technology
Symbol
Parameter
Conditions
VESD
electrostatic discharge voltage MM (JEDEC JESD22-A115)
Source-drain diode
IS source current
Tmb = 25 °C
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ≤ 40 V; RGS = 50 Ω; unclamped;
Fig. 3
[1]
Min Max Unit
890 -
V
- 100 A
- 1128 A
- 248 mJ
[1] Continuous current is limited by package.
320
ID
(A)
240
003aaj880
120
Pder
(%)
80
03na19
160
(1)
80
40
0
0 50 100 150 200
Tmb(°C)
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0 50 100 150 200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN1R8-40YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 August 2012
© Nexperia B.V. 2017. All rights reserved
3 / 14







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