N-channel MOSFET. PSMN3R9-60PS Datasheet

PSMN3R9-60PS MOSFET. Datasheet pdf. Equivalent

PSMN3R9-60PS Datasheet
Recommendation PSMN3R9-60PS Datasheet
Part PSMN3R9-60PS
Description N-channel MOSFET
Feature PSMN3R9-60PS; PSMN3R9-60PS N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78 1 February 2013 Product data s.
Manufacture nexperia
Datasheet
Download PSMN3R9-60PS Datasheet




nexperia PSMN3R9-60PS
PSMN3R9-60PS
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
1 February 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in SOT78 using TrenchMOS technology. Product
design and manufacture has been optimized for use in battery operated power tools.
2. Features and benefits
High efficiency due to low switching & conduction losses
Robust construction for demanding applications
Standard level gate
3. Applications
Battery-powered tools
Load switching
Motor control
Uninterruptible power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QG(tot)
QGD
total gate charge
gate-drain charge
ID = 25 A; VDS = 48 V; VGS = 10 V;
Fig. 13; Fig. 14
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
ID = 130 A; Vsup ≤ 60 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 3
[1]
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 60 V
- - 130 A
- - 263 W
- 2.94 3.9 mΩ
- 103 - nC
- 33 - nC
- - 283 mJ



nexperia PSMN3R9-60PS
Nexperia
PSMN3R9-60PS
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 G gate
mb
2 D drain
3 S source
mb D
mounting base; connected to
drain
Graphic symbol
D
G
mbb076 S
123
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN3R9-60PS
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
7. Marking
Table 4. Marking codes
Type number
PSMN3R9-60PS
Marking code
PSMN3R9-60PS
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
ID drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Tmb = 100 °C; VGS = 10 V; Fig. 1
IDM peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4
[1]
PSMN3R9-60PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 February 2013
Min Max Unit
- 60 V
- 60 V
-20 20
V
- 130 A
- 127 A
- 705 A
© Nexperia B.V. 2017. All rights reserved
2 / 13



nexperia PSMN3R9-60PS
Nexperia
PSMN3R9-60PS
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
Symbol
Parameter
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tmb = 25 °C; Fig. 2
Tmb = 25 °C
pulsed; tp ≤ 10 µs; Tmb = 25 °C
[1]
ID = 130 A; Vsup ≤ 60 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 3
[1] Continuous current is limited by package.
200
ID
(A)
160
120
(1)
003aak454
120
Pder
(%)
80
Min Max Unit
- 263 W
-55 175 °C
-55 175 °C
- 260 °C
- 130 A
- 705 A
- 283 mJ
03aa16
80
40
40
0
0 30 60 90 120 150 180
Tj (°C)
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0 50 100 150 200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN3R9-60PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 February 2013
© Nexperia B.V. 2017. All rights reserved
3 / 13







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