N-channel MOSFET. PSMN2R8-40PS Datasheet

PSMN2R8-40PS MOSFET. Datasheet pdf. Equivalent

PSMN2R8-40PS Datasheet
Recommendation PSMN2R8-40PS Datasheet
Part PSMN2R8-40PS
Description N-channel MOSFET
Feature PSMN2R8-40PS; PSMN2R8-40PS N-channel TO220 40 V 2.8 mΩ standard level MOSFET 11 February 2013 Product data shee.
Manufacture nexperia
Datasheet
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nexperia PSMN2R8-40PS
PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
11 February 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
High efficiency due to low switching and conduction losses
Suitable for standard level gate drive sources
3. Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Tj junction temperature
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 10 A; Tj = 100 °C;
resistance
Fig. 12; Fig. 13
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 13
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A; VDS = 20 V;
Fig. 14; Fig. 15
Min Typ Max Unit
- - 40 V
[1] - - 100 A
- - 211 W
-55 -
175 °C
-
[2] -
- 4.5 mΩ
2.3 2.8 mΩ
- 17 - nC
- 71 - nC



nexperia PSMN2R8-40PS
Nexperia
PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
Symbol
Parameter
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
Conditions
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ≤ 40 V; unclamped; RGS = 50 Ω
[1] Continuous current rating is limited by package.
[2] Measured 3 mm from package.
Min Typ Max Unit
- - 407 mJ
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 G gate
mb
2 D drain
3 S source
mb D
mounting base; connected to
drain
Graphic symbol
D
G
mbb076 S
123
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN2R8-40PS
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
7. Marking
Table 4. Marking codes
Type number
PSMN2R8-40PS
Marking code
PSMN2R8-40PS
PSMN2R8-40PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 February 2013
© Nexperia B.V. 2017. All rights reserved
2 / 13



nexperia PSMN2R8-40PS
Nexperia
PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
VGS gate-source voltage
ID drain current
VGS = 10 V; Tmb = 100 °C; Fig. 1
VGS = 10 V; Tmb = 25 °C; Fig. 1
IDM peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source current
Tmb = 25 °C
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ≤ 40 V; unclamped; RGS = 50 Ω
[1]
[1]
[1] Continuous current rating is limited by package.
200
ID
(A)
150
100
(1)
003aad361
120
Pder
(%)
80
40
50
Min Max Unit
- 40 V
- 40 V
-20 20
V
- 100 A
- 100 A
- 797 A
- 211 W
-55 175 °C
-55 175 °C
- 100 A
- 797 A
- 407 mJ
03aa16
0
0 50 100 150 200
Tmb (°C)
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0 50 100 150 200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN2R8-40PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 February 2013
© Nexperia B.V. 2017. All rights reserved
3 / 13







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