N-channel MOSFET. PSMN2R8-80BS Datasheet

PSMN2R8-80BS MOSFET. Datasheet pdf. Equivalent

PSMN2R8-80BS Datasheet
Recommendation PSMN2R8-80BS Datasheet
Part PSMN2R8-80BS
Description N-channel MOSFET
Feature PSMN2R8-80BS; PSMN2R8-80BS N-channel 80 V, 3 mΩ standard level FET in D2PAK Rev. 2 — 29 February 2012 Product d.
Manufacture nexperia
Datasheet
Download PSMN2R8-80BS Datasheet




nexperia PSMN2R8-80BS
PSMN2R8-80BS
N-channel 80 V, 3 mstandard level FET in D2PAK
Rev. 2 — 29 February 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters
Load switch
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 13
VGS = 10 V; ID = 75 A; VDS = 40 V;
see Figure 14; see Figure 15
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup 80 V; RGS = 50 ; unclamped
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 80 V
[1] - - 120 A
- - 306 W
-55 -
175 °C
-
4.21 5
m
-
2.55 3
m
- 27 - nC
- 139 - nC
- - 676 mJ



nexperia PSMN2R8-80BS
Nexperia
PSMN2R8-80BS
N-channel 80 V, 3 mstandard level FET in D2PAK
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain[1]
S source
D drain
[1] It is not possible to make connection to pin 2.
3. Ordering information
Simplified outline
mb
2
13
SOT404 (D2PAK)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN2R8-80BS
D2PAK
4. Limiting values
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup 80 V; RGS = 50 ; unclamped
[1] Continuous current is limited by package.
PSMN2R8-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 February 2012
Min
-
-
-20
[1] -
[1] -
-
-
-55
-55
-
Max Unit
80 V
80 V
20 V
120 A
120 A
824 A
306 W
175 °C
175 °C
260 °C
[1] -
120 A
- 824 A
- 676 mJ
© Nexperia B.V. 2017. All rights reserved
2 of 14



nexperia PSMN2R8-80BS
Nexperia
PSMN2R8-80BS
N-channel 80 V, 3 mstandard level FET in D2PAK
240
ID
(A)
180
003aaf615
120
60
(1)
0
0 50 100 150 200
Tmb (°C)
120
Pder
(%)
80
03aa16
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
103
ID
(A)
102
Limit RDSon = VDS / ID
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aag771
tp =10 μ s
100 μ s
10
DC
1 ms
1 10 ms
100 ms
10-1
10-1 1 10 102 103
V DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN2R8-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 February 2012
© Nexperia B.V. 2017. All rights reserved
3 of 14







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