N-channel MOSFET. PSMN2R8-40BS Datasheet

PSMN2R8-40BS MOSFET. Datasheet pdf. Equivalent

PSMN2R8-40BS Datasheet
Recommendation PSMN2R8-40BS Datasheet
Part PSMN2R8-40BS
Description N-channel MOSFET
Feature PSMN2R8-40BS; PSMN2R8-40BS N-channel 40 V 2.9 mΩ standard level MOSFET in D2PAK Rev. 1 — 20 March 2012 Product .
Manufacture nexperia
Datasheet
Download PSMN2R8-40BS Datasheet




nexperia PSMN2R8-40BS
PSMN2R8-40BS
N-channel 40 V 2.9 mstandard level MOSFET in D2PAK
Rev. 1 — 20 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Tmb = 25 °C; see Figure 2
[1]
VGS = 10 V; ID = 10 A; Tj = 100 °C;
see Figure 13; see Figure 14
VGS = 10 V; ID = 10 A; Tj = 25 °C;
see Figure 14
VGS = 10 V; ID = 10 A; VDS = 20 V;
see Figure 15; see Figure 16
VGS = 10 V; Tj(init) = 25 °C;
ID = 100 A; Vsup 40 V; unclamped;
RGS = 50
Min
-
-
-
-55
-
-
-
-
-
[1] Continuous current rating is limited by package.
Typ Max Unit
- 40 V
- 100 A
- 211 W
- 175 °C
3.58 4.2
2.47 2.9
m
m
17 -
71 -
nC
nC
- 407 mJ



nexperia PSMN2R8-40BS
Nexperia
PSMN2R8-40BS
N-channel 40 V 2.9 mstandard level MOSFET in D2PAK
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain[1]
S source
D mounting base; connected to drain
Simplified outline
mb
2
13
SOT404 (D2PAK)
[1] It is not possible to make connection to pin 2
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN2R8-40BS
D2PAK
4. Marking
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Table 4. Marking codes
Type number
PSMN2R8-40BS
Marking code
PSMN2R8-40BS
PSMN2R8-40BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 March 2012
© Nexperia B.V. 2017. All rights reserved
2 of 15



nexperia PSMN2R8-40BS
Nexperia
PSMN2R8-40BS
N-channel 40 V 2.9 mstandard level MOSFET in D2PAK
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup 40 V; unclamped; RGS = 50
[1] Continuous current rating is limited by package.
Min
-
-
-20
[1] -
[1] -
-
-
-55
-55
-
[1] -
-
-
Max Unit
40 V
40 V
20 V
100 A
100 A
797 A
211 W
175 °C
175 °C
260 °C
100 A
797 A
407 mJ
200
ID
(A)
150
100
(1)
50
003aad361
120
Pder
(%)
80
40
03aa16
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN2R8-40BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 March 2012
© Nexperia B.V. 2017. All rights reserved
3 of 15







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)