N-channel MOSFET. PSMN012-100YL Datasheet

PSMN012-100YL MOSFET. Datasheet pdf. Equivalent

PSMN012-100YL Datasheet
Recommendation PSMN012-100YL Datasheet
Part PSMN012-100YL
Description N-channel MOSFET
Feature PSMN012-100YL; PSMN012-100YL N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56 20 October 2016 Product data s.
Manufacture nexperia
Datasheet
Download PSMN012-100YL Datasheet




nexperia PSMN012-100YL
PSMN012-100YL
N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56
20 October 2016
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS
technology. This product is designed and qualified for use in a wide range of power
supply & motor control equipment.
2. Features and benefits
Advanced TrenchMOS provides low RDSon and low gate charge
Logic level gate operation
Avalanche rated, 100 % tested
LFPAK provides maximum power density in a Power SO8 package
3. Applications
Synchronous rectification in power supply equipment
Chargers & adaptors with Vout < 10 V
Fast charge & USB-PD applications
Battery powered motor control
LED lighting & TV backlight
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11
resistance
Dynamic characteristics
QGD
gate-drain charge
ID = 25 A; VDS = 80 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
- - 100 V
- - 85 A
- - 238 W
-
9.5 12
- 24 - nC



nexperia PSMN012-100YL
Nexperia
PSMN012-100YL
N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G
mb D
gate
mounting base; connected to
drain
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN012-100YL
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package
(LFPAK56; Power-SO8); 4 leads
Version
SOT669
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
ID drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
VGS = 5 V; Tmb = 100 °C; Fig. 2
IDM peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source current
Tmb = 25 °C
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C
Min Max Unit
- 100 V
- 100 V
-20 20
V
- 238 W
- 85 A
- 60 A
- 339 A
-55 175 °C
-55 175 °C
- 85 A
- 339 A
PSMN012-100YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 October 2016
© Nexperia B.V. 2017. All rights reserved
2 / 12



nexperia PSMN012-100YL
Nexperia
PSMN012-100YL
N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56
Symbol
Parameter
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Min Max Unit
ID = 85 A; Vsup ≤ 100 V; RGS = 50 Ω;
VGS = 5 V; Tj(init) = 25 °C; unclamped;
Fig. 4
[1][2]
-
139 mJ
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2] Refer to application note AN10273 for further information.
120
Pder
(%)
03aa16
100
ID
(A)
80
003aai835
80
60
40
40
20
0
0 50 100 150 200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
0
0 50 100 150 200
Tmb (°C)
Fig. 2. Continuous drain current as a function of
mounting base temperature
103
ID
(A)
102
10
Limit RDSon = VDS / ID
003aai837
tp =10 µ s
100 µ s
DC 1 ms
1 10 ms
100 ms
10-1
10-1
1
10 102 103
VDS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN012-100YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 October 2016
© Nexperia B.V. 2017. All rights reserved
3 / 12







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)