N-channel MOSFET. PSMN012-80PS Datasheet

PSMN012-80PS MOSFET. Datasheet pdf. Equivalent

PSMN012-80PS Datasheet
Recommendation PSMN012-80PS Datasheet
Part PSMN012-80PS
Description N-channel MOSFET
Feature PSMN012-80PS; PSMN012-80PS N-channel 80 V 11 mΩ standard level MOSFET Rev. 02 — 25 June 2009 Product data sheet.
Manufacture nexperia
Datasheet
Download PSMN012-80PS Datasheet




nexperia PSMN012-80PS
PSMN012-80PS
N-channel 80 V 11 mstandard level MOSFET
Rev. 02 — 25 June 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for standard level gate drive
sources
1.3 Applications
„ DC-to-DC converters
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
- - 80 V
- - 74 A
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 148 W
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 25 A;
VDS = 40 V; see Figure 14;
see Figure 15
- 9.4 - nC
Static characteristics
RDSon drain-source
on-state resistance
VGS = 10 V; ID = 15 A;
Tj = 25 °C;
[1] -
9 11 m
[1] Measured 3 mm from package.



nexperia PSMN012-80PS
Nexperia
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1G
gate
2D
drain
3S
source
mb D
mounting base; connected to
drain
PSMN012-80PS
N-channel 80 V 11 mstandard level MOSFET
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78
(TO-220AB; SC-46)
Table 3. Ordering information
Type number
Package
Name
Description
Version
PSMN012-80PS TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
SC-46
TO-220AB
PSMN012-80PS_2
Product data sheet
Rev. 02 — 25 June 2009
© Nexperia B.V. 2017. All rights reserved
2 of 13



nexperia PSMN012-80PS
Nexperia
PSMN012-80PS
N-channel 80 V 11 mstandard level MOSFET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
tp 10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current Tmb = 25 °C
ISM peak source current tp 10 µs; pulsed; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 74 A; Vsup 80 V;
drain-source avalanche RGS = 50 ; unclamped
energy
Min Max Unit
- 80 V
- 80 V
-20 20
V
- 52 A
- 74 A
- 295 A
- 148 W
-55 175 °C
-55 175 °C
- 74 A
- 295 A
- 100 mJ
80
003aad009
120
ID
(A) Pder
(%)
60
80
40
40
20
03aa16
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
0
0 50 100 150 200
Tmb (°C)
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN012-80PS_2
Product data sheet
Rev. 02 — 25 June 2009
© Nexperia B.V. 2017. All rights reserved
3 of 13





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