N-channel MOSFET. PSMN7R5-30MLD Datasheet

PSMN7R5-30MLD MOSFET. Datasheet pdf. Equivalent

PSMN7R5-30MLD Datasheet
Recommendation PSMN7R5-30MLD Datasheet
Part PSMN7R5-30MLD
Description N-channel MOSFET
Feature PSMN7R5-30MLD; PSMN7R5-30MLD N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 1.
Manufacture nexperia
Datasheet
Download PSMN7R5-30MLD Datasheet




nexperia PSMN7R5-30MLD
PSMN7R5-30MLD
N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33
using NextPowerS3 Technology
11 August 2015
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.
NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers
high efficiency, low spiking performance usually associated with MOSFETs with an
integrated Schottky or Schottky-like diode but without problematic high leakage current.
NextPowerS3 is particularly suited to high efficiency applications at high switching
frequencies.
2. Features and benefits
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies
Superfast switching with soft-recovery; s-factor > 1
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at
25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Mini Power SO8 package; no glue,
no wire bonds, qualified to 175 °C
Exposed leads for optimal visual solder inspection
3. Applications
On-board DC-to-DC solutions for server and telecommunications
Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM)
Point-of-Load (POL) modules
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
Brushed and brushless motor control
4. Quick reference data
Table 1.
Symbol
VDS
ID
Ptot
Quick reference data
Parameter
Conditions
drain-source voltage 25 °C ≤ Tj ≤ 175 °C
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 2
total power dissipation Tmb = 25 °C; Fig. 1
Min Typ Max Unit
- - 30 V
- - 57 A
- - 45 W



nexperia PSMN7R5-30MLD
Nexperia
PSMN7R5-30MLD
N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using
NextPowerS3 Technology
Symbol
Parameter
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Source-drain diode
S softness factor
Conditions
VGS = 4.5 V; ID = 10 A; Tj = 25 °C;
Fig. 10
VGS = 10 V; ID = 15 A; Tj = 25 °C;
Fig. 10
VGS = 4.5 V; ID = 15 A; VDS = 15 V;
Fig. 12; Fig. 13
VGS = 4.5 V; ID = 15 A; VDS = 15 V;
Fig. 12; Fig. 13
IS = 15 A; VGS = 0 V; dIS/dt = -100 A/µs;
VDS = 15 V; Fig. 16
Min Typ Max Unit
-55 -
175 °C
- 8.2 10.3 mΩ
- 6.3 7.6 mΩ
- 1.7 2.5 nC
- 5.8 8.8 nC
- 1.2 -
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
2 S source
3 S source
4 G gate
mb D
mounting base; connected to
drain
1234
LFPAK33 (SOT1210)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN7R5-30MLD
LFPAK33
Description
Plastic single ended surface mounted package
(LFPAK33); 8 leads
Version
SOT1210
7. Marking
Table 4. Marking codes
Type number
PSMN7R5-30MLD
PSMN7R5-30MLD
Product data sheet
Marking code
7D530L
All information provided in this document is subject to legal disclaimers.
11 August 2015
© Nexperia B.V. 2017. All rights reserved
2 / 13



nexperia PSMN7R5-30MLD
Nexperia
PSMN7R5-30MLD
N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using
NextPowerS3 Technology
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
VDGR
drain-gate voltage
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
VGS gate-source voltage
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
ID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
VGS = 10 V; Tmb = 100 °C; Fig. 2
IDM peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS source current
Tmb = 25 °C
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 15 A;
Vsup ≤ 30 V; RGS = 50 Ω; unclamped;
tp = 97 µs
[1]
[1] Protected by 100% test
Min Max Unit
- 30 V
- 30 V
-20 20
V
- 45 W
- 57 A
- 40 A
- 230 A
-55 175 °C
-55 175 °C
- 260 °C
- 38 A
- 230 A
- 28.3 mJ
PSMN7R5-30MLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 August 2015
© Nexperia B.V. 2017. All rights reserved
3 / 13







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