PSMN7R5-60YL

PSMN7R5-60YL N-channel 60 V, 7.5 mΩ logic level MOSFET in LFPAK56 20 November 2015 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSonand low gate charge Logic level gate operation Avalanche rated, 100% tested LFPAK provides maximum power density in a Power SO8 package 3. Applications Synchronous rectifier in LLC topology Chargers & adaptors with Vout < 10 V Fast charge & USB-PD applications Battery powered motor control LED lighting & TV backlight 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig. 1 Tj junc...