N-channel MOSFET. PSMN6R5-80PS Datasheet

PSMN6R5-80PS MOSFET. Datasheet pdf. Equivalent

PSMN6R5-80PS Datasheet
Recommendation PSMN6R5-80PS Datasheet
Part PSMN6R5-80PS
Description N-channel MOSFET
Feature PSMN6R5-80PS; PSMN6R5-80PS N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 Rev. 02 — 1 November 2010 Produ.
Manufacture nexperia
Datasheet
Download PSMN6R5-80PS Datasheet




nexperia PSMN6R5-80PS
PSMN6R5-80PS
N-channel 80 V 6.9 mstandard level MOSFET in TO220
Rev. 02 — 1 November 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for standard level gate drive
sources
1.3 Applications
„ DC-to-DC converters
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
Conditions
Min Typ Max Unit
Tj 25 °C; Tj 175 °C
- - 80 V
Tmb = 25 °C; VGS = 10 V; [1] - - 100 A
see Figure 1
Tmb = 25 °C; see Figure 2 - - 210 W
-55 -
175 °C
VGS = 10 V; ID = 15 A;
[2] -
Tj = 25 °C; see Figure 13
VGS = 10 V; ID = 25 A;
VDS = 40 V; see Figure 14;
see Figure 15
-
-
5.9 6.9 m
16 -
71 -
nC
nC
VGS = 10 V; Tj(init) = 25 °C; - - 700 mJ
ID = 49 A; Vsup 80 V;
RGS = 50 ; unclamped
[1] Continuous current rating is limited by package.
[2] Measured 3 mm from package.



nexperia PSMN6R5-80PS
Nexperia
PSMN6R5-80PS
N-channel 80 V 6.9 mstandard level MOSFET in TO220
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base; connected to
drain
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
PSMN6R5-80PS
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
PSMN6R5-80PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 November 2010
© Nexperia B.V. 2017. All rights reserved
2 of 15



nexperia PSMN6R5-80PS
Nexperia
PSMN6R5-80PS
N-channel 80 V 6.9 mstandard level MOSFET in TO220
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Conditions
Min
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
-
-
-20
VGS = 10 V; Tmb = 100 °C; see Figure 1
-
VGS = 10 V; Tmb = 25 °C; see Figure 1
[1] -
pulsed; tp 10 µs; Tmb = 25 °C; see Figure 3 -
Tmb = 25 °C; see Figure 2
-
-55
-55
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
-
-
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 49 A;
Vsup 80 V; RGS = 50 ; unclamped
-
[1] Continuous current rating is limited by package.
Max Unit
80 V
80 V
20 V
82 A
100 A
470 A
210 W
175 °C
175 °C
100 A
470 A
700 mJ
150
ID
(A)
100
(1)
003aad362
120
Pder
(%)
80
03aa16
50 40
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN6R5-80PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 November 2010
© Nexperia B.V. 2017. All rights reserved
3 of 15







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