N-channel MOSFET. PSMN6R5-80BS Datasheet

PSMN6R5-80BS MOSFET. Datasheet pdf. Equivalent

PSMN6R5-80BS Datasheet
Recommendation PSMN6R5-80BS Datasheet
Part PSMN6R5-80BS
Description N-channel MOSFET
Feature PSMN6R5-80BS; .
Manufacture nexperia
Datasheet
Download PSMN6R5-80BS Datasheet




nexperia PSMN6R5-80BS
PSMN6R5-80BS
N-channel 80V 6.9mstandard level MOSFET in D2PAK
Rev. 2 — 2 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 13
VGS = 10 V; ID = 25 A; VDS = 40 V;
see Figure 14; see Figure 15
VGS = 10 V; Tj(init) = 25 °C; ID = 49 A;
Vsup 80 V; RGS = 50 ; unclamped
[1] Continuous current rating is limited by package.
Min Typ Max Unit
- - 80 V
[1] - - 100 A
- - 210 W
-55 -
175 °C
- 5.9 6.9 m
- 16 - nC
- 71 - nC
- - 700 mJ



nexperia PSMN6R5-80BS
Nexperia
PSMN6R5-80BS
N-channel 80V 6.9mstandard level MOSFET in D2PAK
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
Simplified outline
G gate
D drain[1]
mb
S source
D mounting base; connected to
drain
2
13
SOT404 (D2PAK)
[1] It is not possible to make connection to pin 2.
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN6R5-80BS
D2PAK
4. Limiting values
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
VGS = 10 V; Tj(init) = 25 °C; ID = 49 A; Vsup 80 V;
RGS = 50 ; unclamped
[1] Continuous current rating is limited by package.
PSMN6R5-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 March 2012
Min
-
-
-20
-
[1] -
-
-
-55
-55
-
Max Unit
80 V
80 V
20 V
82 A
100 A
470 A
210 W
175 °C
175 °C
260 °C
- 100 A
- 470 A
- 700 mJ
© Nexperia B.V. 2017. All rights reserved
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nexperia PSMN6R5-80BS
Nexperia
150
ID
(A)
100
(1)
50
PSMN6R5-80BS
N-channel 80V 6.9mstandard level MOSFET in D2PAK
003aad362
120
Pder
(%)
80
03aa16
40
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
103
ID Limit RDSon = VDS / ID
(A)
102
(1)
10
DC
1
10-1
1
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
10 μs
003aad386
100 μs
1 ms
10 ms
100 ms
102
VDS (V)
103
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN6R5-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 March 2012
© Nexperia B.V. 2017. All rights reserved
3 of 14







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