N-channel MOSFET. PSMN6R0-25YLD Datasheet

PSMN6R0-25YLD MOSFET. Datasheet pdf. Equivalent

PSMN6R0-25YLD Datasheet
Recommendation PSMN6R0-25YLD Datasheet
Part PSMN6R0-25YLD
Description N-channel MOSFET
Feature PSMN6R0-25YLD; PSMN6R0-25YLD N-channel 25 V, 6.75 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology .
Manufacture nexperia
Datasheet
Download PSMN6R0-25YLD Datasheet




nexperia PSMN6R0-25YLD
PSMN6R0-25YLD
N-channel 25 V, 6.75 mΩ logic level MOSFET in LFPAK56
using NextPowerS3 Technology
6 April 2016
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.
NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers
high efficiency, low spiking performance usually associated with MOSFETS with an
integrated Schottky or Schottky-like diode but without problematic high leakage current.
NextPowerS3 is particularly suited to high efficiency applications at high switching
frequencies.
2. Features and benefits
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies
Superfast switching with soft-recovery; s-factor > 1
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at
25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package; no glue, no
wire bonds, qualified to 175 °C
Wave solderable; exposed leads for optimal visual solder inspection
3. Applications
On-board DC:DC solutions for server and telecommunications
Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM)
Point-of-Load (POL) modules
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
Brushed and brushless motor control
4. Quick reference data
Table 1.
Symbol
VDS
ID
Ptot
Quick reference data
Parameter
Conditions
drain-source voltage 25 °C ≤ Tj ≤ 175 °C
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
total power dissipation Tmb = 25 °C; Fig. 1
Min Typ Max Unit
- - 25 V
- - 61 A
- - 43 W



nexperia PSMN6R0-25YLD
Nexperia
PSMN6R0-25YLD
N-channel 25 V, 6.75 mΩ logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
Symbol
Parameter
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
total gate charge
QGD gate-drain charge
Source-drain diode
S softness factor
Conditions
VGS = 4.5 V; ID = 10 A; Tj = 25 °C;
Fig. 10
VGS = 10 V; ID = 15 A; Tj = 25 °C;
Fig. 10
ID = 15 A; VDS = 12 V; VGS = 10 V;
Fig. 12; Fig. 13
ID = 15 A; VDS = 12 V; VGS = 4.5 V;
Fig. 12; Fig. 13
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 15 A; VDS = 12 V; VGS = 4.5 V;
Fig. 12; Fig. 13
IS = 15 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 12 V; Fig. 16
Min Typ Max Unit
-55 -
175 °C
- 8.29 10.19 mΩ
- 5.84 6.75 mΩ
- 10.5 - nC
- 4.9 - nC
- 5.6 - nC
- 1.1 - nC
- 1.1 -
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G
mb D
gate
mounting base; connected to
drain
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN6R0-25YLD
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package
(LFPAK56; Power-SO8); 4 leads
Version
SOT669
PSMN6R0-25YLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 April 2016
© Nexperia B.V. 2017. All rights reserved
2 / 13



nexperia PSMN6R0-25YLD
Nexperia
7. Marking
Table 4. Marking codes
Type number
PSMN6R0-25YLD
PSMN6R0-25YLD
N-channel 25 V, 6.75 mΩ logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
Marking code
6D025L
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
VDGR
drain-gate voltage
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
VGS gate-source voltage
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
ID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
VGS = 10 V; Tmb = 100 °C; Fig. 2
IDM peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
VESD
electrostatic discharge voltage HBM
Source-drain diode
IS source current
Tmb = 25 °C
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
ID = 15 A; Vsup ≤ 25 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
tp = 209 µs
[1]
[1] Protected by 100% test
Min Max Unit
- 25 V
- 25 V
-20 20
V
- 43 W
- 61 A
- 43 A
- 244 A
-55 175 °C
-55 175 °C
- 260 °C
300 -
V
- 36 A
- 244 A
- 50.9 mJ
PSMN6R0-25YLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 April 2016
© Nexperia B.V. 2017. All rights reserved
3 / 13







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