N-channel MOSFET. NX3008NBKV Datasheet

NX3008NBKV MOSFET. Datasheet pdf. Equivalent

NX3008NBKV Datasheet
Recommendation NX3008NBKV Datasheet
Part NX3008NBKV
Description Dual N-channel MOSFET
Feature NX3008NBKV; NX3008NBKV 30 V, 400 mA dual N-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1.
Manufacture nexperia
Datasheet
Download NX3008NBKV Datasheet




nexperia NX3008NBKV
NX3008NBKV
30 V, 400 mA dual N-channel Trench MOSFET
Rev. 1 — 1 August 2011
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Very fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = 4.5 V; ID = 350 mA;
resistance
Tj = 25 °C
-
-8
[1] -
-
-
-
-
1
30 V
8V
400 mA
1.4
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.



nexperia NX3008NBKV
Nexperia
NX3008NBKV
30 V, 400 mA dual N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
S1 source TR1
G1 gate TR1
D2 drain TR2
S2 source TR2
G2 gate TR2
D1 drain TR1
Simplified outline
654
Graphic symbol
D1
123
SOT666 (SOT666)
G1
S1
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
NX3008NBKV
SOT666
4. Marking
Description
plastic surface-mounted package; 6 leads
Table 4. Marking codes
Type number
NX3008NBKV
[1] % = placeholder for manufacturing site code.
Marking code[1]
AA
D2
G2
S2
017aaa256
Version
SOT666
NX3008NBKV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 August 2011
© Nexperia B.V. 2017. All rights reserved
2 of 17



nexperia NX3008NBKV
Nexperia
NX3008NBKV
30 V, 400 mA dual N-channel Trench MOSFET
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Per device
Ptot total power dissipation
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
ESD maximum rating
VESD
electrostatic discharge voltage
Tsp = 25 °C
Tamb = 25 °C
Tamb = 25 °C
HBM
Min Max Unit
-
-8
[1] -
[1] -
-
[2] -
[1] -
-
30
8
400
260
1.6
330
390
1090
V
V
mA
mA
A
mW
mW
mW
[2] -
-55
-55
-65
500 mW
150 °C
150 °C
150 °C
- 400 mA
[3] -
2000 V
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
NX3008NBKV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 August 2011
© Nexperia B.V. 2017. All rights reserved
3 of 17







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)