NX3008NBKV

NX3008NBKV 30 V, 400 mA dual N-channel Trench MOSFET 28 December 2022 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics (per transistor) RDSon drain-source on-state VGS = 4.5 V; ID = 350 mA; Tj = 25 °C resistance Min Typ Max - - 30 -8 - 8 - - 400 - 1 1.4 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. Unit V V mA Ω Nexperia 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 6. Ordering information Table 3. Ordering information Type number Package Name NX3008NBKV SOT666 7. Marking Table 4. Marking codes Type number NX3008NBKV NX3008NBKV 30 V, 400 mA dual N-channel Trench MOSFET Simplified outline 654 123 SOT666 G...