P-channel MOSFET. NX3008PBKMB Datasheet

NX3008PBKMB MOSFET. Datasheet pdf. Equivalent

NX3008PBKMB Datasheet
Recommendation NX3008PBKMB Datasheet
Part NX3008PBKMB
Description P-channel MOSFET
Feature NX3008PBKMB; NX3008PBKMB 30 V, single P-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Produc.
Manufacture nexperia
Datasheet
Download NX3008PBKMB Datasheet




nexperia NX3008PBKMB
NX3008PBKMB
30 V, single P-channel Trench MOSFET
Rev. 1 — 11 May 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Very fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
Ultra thin package profile with
0.37 mm height
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; ID = -200 mA; Tj = 25 °C
[1]
Min Typ Max Unit
- - -30 V
-8 -
8V
- - -300 mA
- 2.8 4.1
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.



nexperia NX3008PBKMB
Nexperia
NX3008PBKMB
30 V, single P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G gate
S source
D drain
Simplified outline
Graphic symbol
1
3
2
Transparent
top view
SOT883B (DFN1006B-3)
D
G
S
017aaa259
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
NX3008PBKMB
DFN1006B-3
Description
Leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.37 mm
4. Marking
Table 4. Marking codes
Type number
NX3008PBKMB
Marking code
0000 0100
Version
SOT883B
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
READING DIRECTION
Fig 1. DFN1006B-3 (SOT883B) binary marking code description
MARKING CODE
(EXAMPLE)
006aac673
NX3008PBKMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 May 2012
© Nexperia B.V. 2017. All rights reserved
2 of 15



nexperia NX3008PBKMB
Nexperia
NX3008PBKMB
30 V, single P-channel Trench MOSFET
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
ESD maximum rating
VESD
electrostatic discharge voltage
Tsp = 25 °C
Tamb = 25 °C
HBM
[1]
[1]
[2]
[1]
[1]
[3]
Min Max Unit
- -30 V
-8 8
V
- -300 mA
- -185 mA
- -1.2 A
- 360 mW
- 715 mW
- 2700 mW
-55 150 °C
-55 150 °C
-65 150 °C
- -300 mA
- 2000 V
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
120
Pder
(%)
80
001aao121
120
Ider
(%)
80
001aao122
40 40
0
-75 -25 25 75 125 175
Tj (°C)
0
-75 -25 25
75 125 175
Tj (°C)
Fig 2. Normalized total power dissipation as a
function of junction temperature
Fig 3. Normalized continuous drain current as a
function of junction temperature
NX3008PBKMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 May 2012
© Nexperia B.V. 2017. All rights reserved
3 of 15







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