NX3008PBKS
30 V, 200 mA dual P-channel Trench MOSFET
Rev. 1 — 1 August 2011
Product data sheet
1. Product profile
1...
NX3008PBKS
30 V, 200 mA dual P-channel Trench MOSFET
Rev. 1 — 1 August 2011
Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect
Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching Low threshold voltage Trench MOSFET technology
ESD protection up to 2 kV AEC-Q101 qualified
1.3 Applications
Relay driver High-speed line driver
High-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per
transistor
VDS drain-source voltage VGS gate-source voltage ID drain current
Static characteristics (per
transistor)
RDSon
drain-source on-state resistance
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; ID = -200 mA; Tj = 25 °C
-8 [1] -
-
- -30 V - 8V - -200 mA
2.8 4.1 Ω
[1] Device mo...
