P-channel MOSFET. NX3008PBKW Datasheet

NX3008PBKW MOSFET. Datasheet pdf. Equivalent

NX3008PBKW Datasheet
Recommendation NX3008PBKW Datasheet
Part NX3008PBKW
Description P-channel MOSFET
Feature NX3008PBKW; NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1. Produ.
Manufacture nexperia
Datasheet
Download NX3008PBKW Datasheet




nexperia NX3008PBKW
NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
Rev. 1 — 1 August 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; ID = -200 mA;
Tj = 25 °C
Min Typ Max Unit
- - -30 V
-8 - 8 V
[1] - - -200 mA
- 2.8 4.1
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.



nexperia NX3008PBKW
Nexperia
NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G gate
S source
D drain
Simplified outline
3
12
SOT323 (SC-70)
Graphic symbol
D
G
S
017aaa259
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
NX3008PBKW
SC-70
4. Marking
Description
plastic surface-mounted package; 3 leads
Version
SOT323
Table 4. Marking codes
Type number
NX3008PBKW
[1] % = placeholder for manufacturing site code
Marking code[1]
AB%
NX3008PBKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 August 2011
© Nexperia B.V. 2017. All rights reserved
2 of 16



nexperia NX3008PBKW
Nexperia
NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
ESD maximum rating
VESD
electrostatic discharge voltage
Tsp = 25 °C
Tamb = 25 °C
HBM
Min
-
-8
[1] -
[1] -
-
[2] -
[1] -
-
-55
-55
-65
[1] -
[3] -
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
Max
-30
8
-200
-130
-0.8
260
310
830
150
150
150
Unit
V
V
mA
mA
A
mW
mW
mW
°C
°C
°C
-200 mA
2000 V
NX3008PBKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 August 2011
© Nexperia B.V. 2017. All rights reserved
3 of 16







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