N-channel MOSFET. PSMN013-100YSE Datasheet

PSMN013-100YSE MOSFET. Datasheet pdf. Equivalent

PSMN013-100YSE Datasheet
Recommendation PSMN013-100YSE Datasheet
Part PSMN013-100YSE
Description N-channel MOSFET
Feature PSMN013-100YSE; PSMN013-100YSE N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56 18 December 2012 Product da.
Manufacture nexperia
Datasheet
Download PSMN013-100YSE Datasheet




nexperia PSMN013-100YSE
PSMN013-100YSE
N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56
18 December 2012
Product data sheet
1. General description
Standard level N-channel MOSFET in a LFPAK56 package qualified to 175 °C. Part of
Nexperia's "NextPower Live" portfolio, the PSMN013-100YSE complements the latest
"hot-swap" controllers - robust enough to withstand substantial inrush currents during turn
on, whilst offering a low RDS(on) characteristic to keep temperatures down and efficiency
up in continued use. Ideal for telecommunication systems based on a 48 V backplane /
supply rail.
2. Features and benefits
Enhanced forward biased safe operating area for superior linear mode operation
Very low RDS(on) for low conduction losses
3. Applications
Electronic fuse
Hot swap
Load switch
Soft start
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 100 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 20 A; Tj = 25 °C;
resistance
Fig. 12
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 20 A; VDS = 50 V;
Fig. 14; Fig. 15
Min Typ Max Unit
- - 100 V
- - 58 A
- - 238 W
- 11 13 mΩ
- 26 - nC
- 75 - nC



nexperia PSMN013-100YSE
Nexperia
PSMN013-100YSE
N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56
Symbol
Parameter
Avalanche Ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
Conditions
VGS = 10 V; Tj(init) = 25 °C; ID = 82 A;
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 3
Min Typ Max Unit
- - 125 mJ
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G
mb D
gate
mounting base; connected to
drain
1234
LFPAK; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN013-100YSE
LFPAK;
Power-SO8
Description
plastic single-ended surface-mounted package; 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
PSMN013-100YSE
Marking code
13100
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
VGS gate-source voltage
ID
PSMN013-100YSE
drain current
VGS = 10 V; Tj = 25 °C; Fig. 1
All information provided in this document is subject to legal disclaimers.
Product data sheet
18 December 2012
Min Max Unit
- 100 V
- 100 V
-20 20
V
- 82 A
© Nexperia B.V. 2017. All rights reserved
2 / 13



nexperia PSMN013-100YSE
Nexperia
PSMN013-100YSE
N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56
Symbol
Parameter
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS source current
ISM peak source current
Avalanche Ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
VGS = 10 V; Tmb = 100 °C; Fig. 1
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
Tmb = 25 °C; Fig. 2
Tmb = 25 °C
pulsed; tp ≤ 10 µs; Tmb = 25 °C
VGS = 10 V; Tj(init) = 25 °C; ID = 82 A;
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 3
100
ID
(A)
80
60
003aak674
120
Pder
(%)
80
Min Max Unit
- 58 A
- 330 A
- 238 W
-55 175 °C
-55 175 °C
- 260 °C
- 100 A
- 330 A
- 125 mJ
03aa16
40
40
20
0
0 30 60 90 120 150 180
Tj (°C)
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0 50 100 150 200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN013-100YSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 December 2012
© Nexperia B.V. 2017. All rights reserved
3 / 13







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