N-channel MOSFET. PSMN013-60YL Datasheet

PSMN013-60YL MOSFET. Datasheet pdf. Equivalent

PSMN013-60YL Datasheet
Recommendation PSMN013-60YL Datasheet
Part PSMN013-60YL
Description N-channel MOSFET
Feature PSMN013-60YL; PSMN013-60YL N-channel 60 V, 13 mΩ logic level MOSFET in LFPAK56 3 June 2016 Product data sheet .
Manufacture nexperia
Datasheet
Download PSMN013-60YL Datasheet




nexperia PSMN013-60YL
PSMN013-60YL
N-channel 60 V, 13 mΩ logic level MOSFET in LFPAK56
3 June 2016
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS
technology. This product is designed and qualified for use in a wide range of power
supply & motor control equipment.
2. Features and benefits
Advanced TrenchMOS provides low RDSon and low gate charge
Logic level gate operation
Avalanche rated, 100% tested
LFPAK provides maximum power density in a Power SO8 package
3. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig. 11
resistance
Dynamic characteristics
QGD
gate-drain charge
ID = 15 A; VDS = 48 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
- - 60 V
- - 53 A
- - 95 W
-
12.1 15
- 6 - nC



nexperia PSMN013-60YL
Nexperia
PSMN013-60YL
N-channel 60 V, 13 mΩ logic level MOSFET in LFPAK56
4. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G
mb D
gate
mounting base; connected to
drain
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
5. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN013-60YL
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package
(LFPAK56; Power-SO8); 4 leads
Version
SOT669
6. Marking
Table 4. Marking codes
Type number
PSMN013-60YL
Marking code
013L60
7. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
ID drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
VGS = 5 V; Tmb = 100 °C; Fig. 2
IDM peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
Tstg storage temperature
PSMN013-60YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 June 2016
Min Max Unit
- 60 V
- 60 V
-20 20
V
- 95 W
- 53 A
- 37.4 A
- 212 A
-55 175 °C
© Nexperia B.V. 2017. All rights reserved
2 / 13



nexperia PSMN013-60YL
Nexperia
PSMN013-60YL
N-channel 60 V, 13 mΩ logic level MOSFET in LFPAK56
Symbol
Parameter
Tj junction temperature
Source-drain diode
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Min Max Unit
-55 175 °C
Tmb = 25 °C
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
-
ID = 53 A; Vsup ≤ 60 V; RGS = 50 Ω;
VGS = 5 V; Tj(init) = 25 °C; unclamped;
Fig. 4
[1][2]
-
53 A
212 A
42.7 mJ
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2] Refer to application note AN10273 for further information.
120
Pder
(%)
03aa16
60
ID
(A)
50
003aai910
80 40
30
40 20
10
0
0 50 100 150 200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
0
0 30 60 90 120 150 180
Tmb (°C)
Fig. 2. Continuous drain current as a function of
mounting base temperature
PSMN013-60YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 June 2016
© Nexperia B.V. 2017. All rights reserved
3 / 13







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