N-channel MOSFET. PSMN013-100ES Datasheet

PSMN013-100ES MOSFET. Datasheet pdf. Equivalent

PSMN013-100ES Datasheet
Recommendation PSMN013-100ES Datasheet
Part PSMN013-100ES
Description N-channel MOSFET
Feature PSMN013-100ES; PSMN013-100ES N-channel 100V 13.9mΩ standard level MOSFET in I2PAK. Rev. 3 — 29 September 2011 Pr.
Manufacture nexperia
Datasheet
Download PSMN013-100ES Datasheet




nexperia PSMN013-100ES
PSMN013-100ES
N-channel 100V 13.9mstandard level MOSFET in I2PAK.
Rev. 3 — 29 September 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C.
This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
drain-source
voltage
Conditions
Tj 25 °C; Tj 175 °C
Min Typ Max Unit
- - 100 V
ID
drain current
Tmb = 25 °C; VGS = 10 V;
[1] - - 68 A
see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
- - 170 W
Tj junction
temperature
-55 -
175 °C
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 15 A;
Tj = 100 °C; see Figure 11
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 12; see Figure 11
[2]
-
-
- 25 m
11 13.9 m
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 25 A;
VDS = 50 V; see Figure 14;
see Figure 13
- 17 - nC



nexperia PSMN013-100ES
Nexperia
PSMN013-100ES
N-channel 100V 13.9mstandard level MOSFET in I2PAK.
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
QG(tot)
total gate charge
VGS = 10 V; ID = 25 A;
VDS = 50 V; see Figure 13;
see Figure 14
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C;
drain-source
ID = 68 A; Vsup 100 V;
avalanche energy unclamped; RGS = 50
[1] Continuous current is limited by package.
[2] Measured 3 mm from package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base; connected to drain
Simplified outline
mb
Min Typ Max Unit
- 59 - nC
- - 127 mJ
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT226 (I2PAK)
Table 3. Ordering information
Type number
Package
Name
PSMN013-100ES
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
Version
SOT226
PSMN013-100ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 September 2011
© Nexperia B.V. 2017. All rights reserved
2 of 14



nexperia PSMN013-100ES
Nexperia
PSMN013-100ES
N-channel 100V 13.9mstandard level MOSFET in I2PAK.
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 175 °C; Tj 25 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 68 A;
Vsup 100 V; unclamped; RGS = 50
[1] Continuous current is limited by package.
Min
-
-
-20
[1] -
[1] -
-
-
-55
-55
-
[1] -
-
-
Max Unit
100 V
100 V
20 V
47 A
68 A
272 A
170 W
175 °C
175 °C
260 °C
68 A
272 A
127 mJ
80
003aac512
120
ID
(A) Pder
(%)
60
80
40
40
20
03aa16
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN013-100ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 September 2011
© Nexperia B.V. 2017. All rights reserved
3 of 14







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