N-channel MOSFET. PSMN4R4-80PS Datasheet

PSMN4R4-80PS MOSFET. Datasheet pdf. Equivalent

PSMN4R4-80PS Datasheet
Recommendation PSMN4R4-80PS Datasheet
Part PSMN4R4-80PS
Description N-channel MOSFET
Feature PSMN4R4-80PS; PSMN4R4-80PS N-channel 80 V, 4.1 mΩ standard level FET Rev. 01 — 18 June 2009 Product data sheet 1.
Manufacture nexperia
Datasheet
Download PSMN4R4-80PS Datasheet




nexperia PSMN4R4-80PS
PSMN4R4-80PS
N-channel 80 V, 4.1 mstandard level FET
Rev. 01 — 18 June 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for standard level gate drive
sources
1.3 Applications
„ DC - DC converters
„ Load switch
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1; see Figure 3
- - 100 A
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 306 W
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 80 A;
VDS = 40 V; see Figure 14;
see Figure 15
- 25 - nC
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 15 A;
Tj = 25 °C; see Figure 6;
see Figure 13
[1] -
3.3 4.1 m
[1] Measured 3 mm from package.



nexperia PSMN4R4-80PS
Nexperia
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1G
gate
2D
drain
3S
source
mb D
drain
PSMN4R4-80PS
N-channel 80 V, 4.1 mstandard level FET
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78
(TO-220AB; SC-46)
Table 3. Ordering information
Type number
Package
Name
Description
Version
PSMN4R4-80PS TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
SC-46
TO-220AB
PSMN4R4-80PS_1
Product data sheet
Rev. 01 — 18 June 2009
© Nexperia B.V. 2017. All rights reserved
2 of 13



nexperia PSMN4R4-80PS
Nexperia
PSMN4R4-80PS
N-channel 80 V, 4.1 mstandard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1;
see Figure 3
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
VGS = 10 V; Tmb = 25 °C; see Figure 1;
see Figure 3
tp 10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current Tmb = 25 °C
ISM peak source current tp 10 µs; pulsed; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup 80 V;
drain-source avalanche RGS = 50 ; unclamped
energy
Min Max Unit
- 80 V
- 80 V
-20 20
V
- 100 A
- 100 A
- 680 A
- 306 W
-55 175 °C
-55 175 °C
- 100 A
- 680 A
- 591 mJ
200
ID
(A)
150
100
50
(1)
003aad091
120
Pder
(%)
80
40
03aa16
0
0 50 100 150 200
Tmb ( C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN4R4-80PS_1
Product data sheet
Rev. 01 — 18 June 2009
© Nexperia B.V. 2017. All rights reserved
3 of 13







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