PSMN4R4-80PS

PSMN4R4-80PS N-channel 80 V, 4.1 mΩ standard level FET Rev. 01 — 18 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Suitable for standard level gate drive sources 1.3 Applications „ DC - DC converters „ Load switch „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 - - 100 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 306 W Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 80 A; VDS = 40 V; see Figure 14; see Figure 15 - 25 - nC S...