N-channel MOSFET. PSMN7R0-30YLC Datasheet

PSMN7R0-30YLC MOSFET. Datasheet pdf. Equivalent

PSMN7R0-30YLC Datasheet
Recommendation PSMN7R0-30YLC Datasheet
Part PSMN7R0-30YLC
Description N-channel MOSFET
Feature PSMN7R0-30YLC; PSMN7R0-30YLC N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology Table 1..
Manufacture nexperia
Datasheet
Download PSMN7R0-30YLC Datasheet




nexperia PSMN7R0-30YLC
PSMN7R0-30YLC
N-channel 30 V 7.1 mlogic level MOSFET in LFPAK using NextPower technology
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Dynamic characteristics
QGD gate-drain charge
VGS = 4.5 V; ID = 20 A;
VDS = 15 V; see Figure 14;
see Figure 15
QG(tot) total gate charge
VGS = 4.5 V; ID = 20 A;
VDS = 15 V; see Figure 14;
see Figure 15
Min Typ Max Unit
- 2.5 - nC
- 7.9 - nC
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S source
S source
S source
G gate
D mounting base; connected to drain
3. Ordering information
Simplified outline
mb
1234
SOT669 (LFPAK;
Power-SO8)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN7R0-30YLC LFPAK; Power-SO8
Description
plastic single-ended surface-mounted package; 4 leads
Version
SOT669



nexperia PSMN7R0-30YLC
PSMN7R0-30YLC
N-channel 30 V 7.1 mlogic level MOSFET in LFPAK using NextPower technology
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
25 °C Tj 175 °C
25 °C Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 25 °C; see Figure 1
VGS = 10 V; Tmb = 100 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 4
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
VESD
electrostatic discharge voltage
Source-drain diode
Tmb = 25 °C; see Figure 2
MM (JEDEC JESD22-A115)
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 61 A;
Vsup 30 V; RGS = 50 ; unclamped;
see Figure 3
Min Max Unit
- 30 V
- 30 V
-20 20 V
- 61 A
- 43 A
- 245 A
- 48 W
-55 175 °C
-55 175 °C
- 260 °C
190 -
V
- 44 A
- 245 A
- 15 mJ
80
ID
(A)
60
40
20
003aag120
120
Pder
(%)
80
40
03na19
0
0 50 100 150 200
Tmb (C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN7R0-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2011
© Nexperia B.V. 2017. All rights reserved
3 of 15



nexperia PSMN7R0-30YLC
PSMN7R0-30YLC
N-channel 30 V 7.1 mlogic level MOSFET in LFPAK using NextPower technology
102
IAL
(A)
10
003aag121
(1)
(2)
1
10-3
10-2
10-1
1 10
tAL (ms)
Fig 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
103
ID
(A)
102
10
Limit R DS on = VDS / ID
DC
003aag122
tp =10 s
100 s
1 ms
1 10 ms
100 ms
10-1
10-1 1 10 102
VDS (V)
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN7R0-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2011
© Nexperia B.V. 2017. All rights reserved
4 of 15







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