N-channel MOSFET. PSMN011-80YS Datasheet

PSMN011-80YS MOSFET. Datasheet pdf. Equivalent

PSMN011-80YS Datasheet
Recommendation PSMN011-80YS Datasheet
Part PSMN011-80YS
Description N-channel MOSFET
Feature PSMN011-80YS; PSMN011-80YS N-channel LFPAK 80 V 11 mΩ standard level MOSFET Rev. 02 — 28 October 2010 Product d.
Manufacture nexperia
Datasheet
Download PSMN011-80YS Datasheet




nexperia PSMN011-80YS
PSMN011-80YS
N-channel LFPAK 80 V 11 mstandard level MOSFET
Rev. 02 — 28 October 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ Advanced TrenchMOS provides low
RDSon and low gate charge
„ High efficiency gains in switching
power converters
„ Improved mechanical and thermal
characteristics
„ LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
„ DC-to-DC converters
„ Lithium-ion battery protection
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 25 A;
Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12;
see Figure 13
Min Typ Max Unit
- - 80 V
- - 67 A
--
-55 -
117 W
175 °C
- - 18 m
- 8.6 11 m



nexperia PSMN011-80YS
Nexperia
PSMN011-80YS
N-channel LFPAK 80 V 11 mstandard level MOSFET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A;
VDS = 40 V; see Figure 14;
see Figure 15
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C;
drain-source avalanche ID = 67 A; Vsup 80 V;
energy
RGS = 50 ; unclamped
Min Typ Max Unit
- 11 - nC
- 45 - nC
- - 121 mJ
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S source
S source
S source
G gate
D mounting base; connected to
drain
Simplified outline
mb
1234
SOT669 (LFPAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN011-80YS
LFPAK
Description
Version
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
PSMN011-80YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 28 October 2010
© Nexperia B.V. 2017. All rights reserved
2 of 15



nexperia PSMN011-80YS
Nexperia
PSMN011-80YS
N-channel LFPAK 80 V 11 mstandard level MOSFET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Conditions
Min Max Unit
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
- 80
- 80
-20 20
V
V
V
VGS = 10 V; Tmb = 100 °C; see Figure 1
- 47 A
VGS = 10 V; Tmb = 25 °C; see Figure 1
- 67 A
pulsed; tp 10 µs; Tmb = 25 °C; see Figure 3 -
266 A
Tmb = 25 °C; see Figure 2
- 117 W
-55 175 °C
-55 175 °C
- 260 °C
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
- 67 A
- 266 A
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 67 A;
Vsup 80 V; RGS = 50 ; unclamped
- 121 mJ
80
ID
(A)
60
40
20
003aad341
120
Pder
(%)
80
40
03aa16
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN011-80YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 28 October 2010
© Nexperia B.V. 2017. All rights reserved
3 of 15







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