N-channel MOSFET. PSMN011-100YSF Datasheet

PSMN011-100YSF MOSFET. Datasheet pdf. Equivalent

PSMN011-100YSF Datasheet
Recommendation PSMN011-100YSF Datasheet
Part PSMN011-100YSF
Description N-channel MOSFET
Feature PSMN011-100YSF; PSMN011-100YSF NextPower 100V, 10.9 mΩ N-channel MOSFET in LFPAK56 package 18 March 2019 Product.
Manufacture nexperia
Datasheet
Download PSMN011-100YSF Datasheet




nexperia PSMN011-100YSF
PSMN011-100YSF
NextPower 100V, 10.9 mΩ N-channel MOSFET in LFPAK56
package
18 March 2019
Product data sheet
1. General description
NextPower 100V standard level gate drive MOSFET. Qualified to 175 °C and recommended for
industrial & consumer applications.
2. Features and benefits
Low Qrr for higher efficiency and lower spiking
Qualified to 175 °C
Low QG x RDSon FOM for high efficiency switching applications
Strong avalanche energy rating (Eas)
Avalanche rated and 100% tested
Ha-free and RoHS compliant LFPAK56 package
Wave-solderable LFPAK56 package
Low-stress LFPAK leadframe for high-reliability applications
3. Applications
Synchronous rectifier in AC-DC and DC-DC
BLDC motor control
USB-PD and mobile fast-charge adapters
LED lighting
Full-bridge and half-bridge applications
Flyback and resonant topologies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
Conditions
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
Tmb = 25 °C; Fig. 1
VGS = 10 V; ID = 20 A; Tj = 25 °C;
Fig. 12
VGS = 10 V; ID = 20 A; Tj = 100 °C;
Fig. 13
ID = 20 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15
Min Typ Max Unit
- - 100 V
- - 79.5 A
- - 152 W
-55 -
175 °C
- 8.8 10.9 mΩ
- 13.9 17.7 mΩ
- 8.1 - nC
- 34.3 - nC



nexperia PSMN011-100YSF
Nexperia
Symbol
Parameter
EDS(AL)S
non-repetitive drain-
source avalanche
energy
Source-drain diode
Qr recovered charge
[1] Protected by 100% test
PSMN011-100YSF
NextPower 100V, 10.9 mΩ N-channel MOSFET in LFPAK56 package
Conditions
ID = 27 A; Vsup ≤ 100 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 4
[1]
Min Typ Max Unit
- - 173 mJ
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 50 V; Fig. 18
- 36.5 - nC
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4 G gate
mb D
mounting base; connected to
drain
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN011-100YSF
LFPAK56;
Power-SO8
Description
plastic, single-ended surface-mounted package; 4 terminals
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
PSMN011-100YSF
Marking code
11FS10Y
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
Ptot
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
drain current
peak drain current
Conditions
25 °C ≤ Tj ≤ 175 °C
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
Tmb = 25 °C; Fig. 1
VGS = 10 V; Tmb = 25 °C; Fig. 2
VGS = 10 V; Tmb = 100 °C; Fig. 2
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
Min Max Unit
- 100 V
- 100 V
-20 20
V
- 152 W
- 79.5 A
- 56.2 A
- 318 A
PSMN011-100YSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 March 2019
© Nexperia B.V. 2019. All rights reserved
2 / 14



nexperia PSMN011-100YSF
Nexperia
PSMN011-100YSF
NextPower 100V, 10.9 mΩ N-channel MOSFET in LFPAK56 package
Symbol
Parameter
Conditions
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering
temperature
Source-drain diode
IS
source current
Tmb = 25 °C
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
ID = 27 A; Vsup ≤ 100 V; RGS = 50 Ω;
source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 4
IAS non-repetitive avalanche Vsup = 100 V; VGS = 10 V; Tj(init) = 25 °C;
current
RGS = 50 Ω
[1] Protected by 100% test
120
Pder
(%)
03aa16
100
ID
(A)
80
[1]
[1]
Min Max Unit
-55 175 °C
-55 175 °C
- 260 °C
- 79.5 A
- 318 A
- 173 mJ
- 27 A
aaa-029242
80
60
40
40
20
0
0 50 100 150 200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
0
0 25 50 75 100 125 150 175 200
Tmb (°C)
VGS ≥ 10 V
Fig. 2. Continuous drain current as a function of
mounting base temperature
PSMN011-100YSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 March 2019
© Nexperia B.V. 2019. All rights reserved
3 / 14







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)