NX3020NAKV

NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - - 200 mA Static characteristics (per transistor) RDSon drain-source on-state VGS = 10 V; ID = 100 mA; Tj = 25 °C resistance - 2.7 4.5 Ω [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided c...