N-channel MOSFET. NX3020NAKV Datasheet

NX3020NAKV MOSFET. Datasheet pdf. Equivalent

NX3020NAKV Datasheet
Recommendation NX3020NAKV Datasheet
Part NX3020NAKV
Description Dual N-channel MOSFET
Feature NX3020NAKV; NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET 29 October 2013 Product data sheet 1. Gener.
Manufacture nexperia
Datasheet
Download NX3020NAKV Datasheet




nexperia NX3020NAKV
NX3020NAKV
30 V, 200 mA dual N-channel Trench MOSFET
29 October 2013
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection
Low threshold voltage
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS drain-source voltage Tj = 25 °C
- - 30 V
VGS gate-source voltage
-20 -
20 V
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1] - - 200 mA
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = 10 V; ID = 100 mA; Tj = 25 °C
resistance
- 2.7 4.5 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.



nexperia NX3020NAKV
Nexperia
NX3020NAKV
30 V, 200 mA dual N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 S1 source TR1
2 G1 gate TR1
3 D2 drain TR2
4 S2 source TR2
5 G2 gate TR2
6 D1 drain TR1
Simplified outline
654
123
SOT666
Graphic symbol
D1
D2
G1
G2
S1 S2
017aaa256
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
NX3020NAKV
SOT666
Description
plastic surface-mounted package; 6 leads
Version
SOT666
7. Marking
Table 4. Marking codes
Type number
NX3020NAKV
Marking code
GB
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
[1]
[1]
[2]
[1]
NX3020NAKV
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2013
Min Max Unit
- 30 V
-20 20
V
- 200 mA
- 120 mA
- 800 mA
- 260 mW
- 370 mW
- 1100 mW
© Nexperia B.V. 2017. All rights reserved
2 / 14



nexperia NX3020NAKV
Nexperia
NX3020NAKV
30 V, 200 mA dual N-channel Trench MOSFET
Symbol
Parameter
Source-drain diode
IS source current
Per device
Ptot total power dissipation
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Conditions
Tamb = 25 °C
Tamb = 25 °C
Min Max Unit
- 200 mA
[2] -
375 mW
-55 150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
120
017aaa001
120
017aaa002
Pder
(%)
Ider
(%)
80 80
40 40
0
- 75 - 25
25
75 125 175
Tamb (°C)
Fig. 1. Normalized total power dissipation as a
function of ambient temperature
0
- 75 - 25
25
75 125 175
Tamb (°C)
Fig. 2. Normalized continuous drain current as a
function of ambient temperature
NX3020NAKV
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2013
© Nexperia B.V. 2017. All rights reserved
3 / 14







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