SiC MOSFET. LSIC1MO120E0160 Datasheet

LSIC1MO120E0160 MOSFET. Datasheet pdf. Equivalent

LSIC1MO120E0160 Datasheet
Recommendation LSIC1MO120E0160 Datasheet
Part LSIC1MO120E0160
Description SiC MOSFET
Feature LSIC1MO120E0160; SiC MOSFET LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L LSIC1MO120E0160 1200 V N-channel, Enhancemen.
Manufacture Littelfuse
Datasheet
Download LSIC1MO120E0160 Datasheet





Littelfuse LSIC1MO120E0160
SiC MOSFET
LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L
LSIC1MO120E0160 1200 V N-channel, Enhancement-mode SiC MOSFET
RoHS Pb
Product Summary
Characteristics
VDS
Typical RDS(ON)
ID ( TC ≤ 100 °C)
Value
1200
160
14
Unit
V
A
Circuit Diagram TO-247-3L
1 23
Environmental
• Littelfuse “RoHS” logo = RoHS
RoHS conform
• Littelfuse “HF” logo =
Halogen Free
• Littelfuse “Pb-free” logo Pb
= Pb-free lead plating
*
* Body
diode
Features
• Optimized for high-
frequency, high-efficiency
applications
• Extremely low gate
charge and output
capacitance
• Low gate resistance for
high-frequency switching
• Normally-off operation at
all temperatures
• Ultra-low on-resistance
• Halogen-free, RoHS
compliant and lead-free
Applications
• High-frequency
applications
• Solar Inverters
• Switch Mode Power
Supplies
• UPS
• Motor Drives
• High Voltage DC/DC
Converters
• Battery Chargers
• Induction Heating
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/05/19



Littelfuse LSIC1MO120E0160
SiC MOSFET
LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L
Maximum Ratings
Characteristics
Continuous Drain Current
Pulsed Drain Current 1
Power Dissipation
Operating Junction Temperature
Gate-source Voltage
Storage Temperature
Lead Temperature for Soldering
Mounting Torque
Footnote 1: Pulse width limited by TJ,max
Thermal Characteristics
Characteristics
Maximum Thermal Resistance, junction-to-case
Maximum Thermal Resistance, junction-to-ambient
Symbol
ID
ID(pulse)
PD
TJ
VGS,MAX
VGS,OP,TR
VGS,OP
TSTG
Tsold
MD
Conditions
VGS = 20 V, TC = 25 °C
VGS = 20 V, TC = 100 °C
TC = 25 °C
TC = 25 °C, TJ = 150 °C
Absolute maximum values
Transient, <1% duty cycle
Recommended DC
operating values
-
-
M3 or 6-32 screw
Value
22
14
44
125
-55 to 150
-6 to 22
-10 to 25
-5 to 20
-55 to 150
260
0.6
5.3
Unit
A
A
W
°C
V
°C
°C
Nm
in-lb
Symbol
Rth,JC,max
Rth,JA,max
Value
1.0
40
Unit
°C/W
°C/W
Electrical Characteristics (TJ = 25 °C unless otherwise specified)
Characteristics
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Drain-source On-state Resistance
Gate Threshold Voltage
Symbol
V(BR)DSS
IDSS
IGSS,F
IGSS,R
RDS(ON)
VGS,(th)
Conditions
Static Characteristics
VGS = 0 V, ID = 250 μA
VDS = 1200 V, VGS = 0 V
VDS = 1200 V, VGS = 0 V, TJ = 150 °C
VGS = 22 V, VDS = 0 V
VGS = -6 V, VDS = 0 V
ID = 10 A, VGS = 20 V
ID = 10 A, VGS = 20 V, TJ = 150 °C
VDS = VGS, ID = 5 mA
VDS = VGS, ID = 5 mA, TJ = 150 °C
Gate Resistance
RG
Resonance method, Drain-Source
shorted
Min
1200
-
-
-
-
-
-
1.8
-
-
Typ
-
1
2
-
-
160
210
2.8
1.9
0.95
Max
-
100
-
100
100
200
-
4.0
-
-
Unit
V
μA
nA
V
Ω
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/05/19



Littelfuse LSIC1MO120E0160
SiC MOSFET
LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L
Electrical Characteristics (TJ = 25 °C unless otherwise specified)
Characteristics
Turn-on Switching Energy
Turn-off Switching Energy
Total Per-cycle Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
COSS Stored Energy
Total Gate Charge
Gate-source Charge
Gate-drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
EON
EOFF
ETS
CISS
COSS
CRSS
EOSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Conditions
Dynamic Characteristics
L = 1V.4GVSmD=DH-=,5F/8+W020D0V=V,,LIRSDIG=C,ex21t S=0DA51,2Ω0, A05
fV=DD1=M8H0z0,
VV,AVC G=S
= 0 V,
25 mV
VDD
V=G8S 0=0-V5,/+ID2=0
10
V
A,
ID
=VD1D0=A,8R00G,eVx,t
V=G5S
= -5/+20 V,
Ω, RL = 80
Ω,
Timing relative to VDS
Value
Min Typ
- 77
- 59
- 136
- 870
- 45
-7
- 14
- 57
- 14
- 20
- 12
-8
- 19
- 14
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
μJ
pF
μJ
nC
ns
Reverse Diode Characteristics
Characteristics
Symbol
Diode Forward Voltage
VSD
Continuous Diode Forward Current
Peak Diode Forward Current 1
IS
ISP
Footnote 1: Pulse width limited by TJ,max
Conditions
IS = 5 A, VGS = 0 V
IS = 5 A, VGS = 0 V, TJ = 150 °C
VGS = 0 V, TC = 25 °C
Value
Min Typ
- 3.8
- 3.4
--
--
Max
-
-
24
44
Unit
V
A
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/05/19





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