LSIC1MO120E0120
LSIC1MO120E0120 1200 V, 120 mOhm N-Channel SiC MOSFET
Silicon Carbide MOSFET Datasheet
Agency Approvals and Environmental
Environmental Approvals
Circuit Diagram
Product Summary
Characteristic
VDS
Typical RDS(ON)
ID (TC
°C)
Value 1200 120
18
Unit V
mOhm A
Features
Optimized for high-frequency, high-efficiency applications
Extre...
