Power MOSFET. IXFH26N100X Datasheet

IXFH26N100X MOSFET. Datasheet pdf. Equivalent

IXFH26N100X Datasheet
Recommendation IXFH26N100X Datasheet
Part IXFH26N100X
Description Power MOSFET
Feature IXFH26N100X; X-Class HiPerFETTM Power MOSFET Advance Technical Information IXFT26N100XHV IXFH26N100X VDSS = ID.
Manufacture IXYS
Datasheet
Download IXFH26N100X Datasheet





IXYS IXFH26N100X
X-Class HiPerFETTM
Power MOSFET
Advance Technical Information
IXFT26N100XHV
IXFH26N100X
VDSS =
ID25 =
RDS(on)
1000V
26A
320m
N-Channel Enhancement Mode
Avalanche Rated
TO-268HV
(IXFT)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247)
TO-268HV
TO-247
Maximum Ratings
1000
1000
V
V
30 V
40 V
26 A
52 A
8A
2J
50 V/ns
860 W
-55 ... +150
150
-55 ... +150
C
C
C
300 °C
260 °C
1.13 / 10
Nm/lb.in
4g
6g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ.
Max.
1000
V
3.5 6.0 V
100 nA
25 A
3 mA
320 m
TO-247
(IXFH)
G
S
D (Tab)
G
DS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
International Standard Packages
High Voltage Package
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2018 IXYS CORPORATION, All Rights Reserved
DS100935A(9/18)



IXYS IXFH26N100X
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs VDS = 20V, ID = 0.5 • ID25, Note 1
RGi Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er)
Co(tr)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3(External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25
RthJC
RthCS
TO-247
Characteristic Values
Min. Typ. Max
11 18
S
0.50
3290
620
30
pF
pF
pF
120 pF
480 pF
29
20
62
8
113
23
55
0.21
ns
ns
ns
ns
nC
nC
nC
0.145 C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, pulse Width Limited by TJM
VSD IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 13A, -di/dt = 100A/μs
VR = 100V
Characteristic Values
Min. Typ. Max
26
A
104 A
1.4 V
220
1.8
16.3
ns
μC
A
IXFT26N100XHV
IXFH26N100X
Note 1. Pulse test, t 300s, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537



IXYS IXFH26N100X
28
24
20
16
12
8
4
0
0
Fig. 1. Output Characteristics @ TJ = 25oC
VGS = 10V
9V
8V
7V
6V
123456
VDS - Volts
7
Fig. 3. Output Characteristics @ TJ = 125oC
28
VGS = 10V
24 8V
20
7V
16
12
8 6V
4
5V
0
0 2 4 6 8 10 12 14 16 18 20
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 13A Value vs.
Drain Current
4.5
4.0 VGS = 10V
3.5
TJ = 125oC
3.0
2.5
2.0
1.5 TJ = 25oC
1.0
0.5
0
5 10 15 20 25 30 35 40 45 50 55
ID - Amperes
IXFT26N100XHV
IXFH26N100X
Fig. 2. Extended Output Characteristics @ TJ = 25oC
60
VGS = 10V
50
9V
40
30 8V
20
10
0
0
7V
6V
5 10 15 20 25
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 13A Value vs.
Junction Temperature
4.0
3.5 VGS = 10V
30
3.0
I D = 26A
2.5
2.0
I D = 13A
1.5
1.0
0.5
0.0
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
1.2
1.1 BVDSS
1.0
0.9
0.8
VGS(th)
0.7
0.6
-60 -40 -20
0 20 40 60 80 100 120 140 160
TJ - Degrees Centigrade
© 2018 IXYS CORPORATION, All Rights Reserved





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)