IXFT32N100XHV

Preliminary Technical Information X-Class HiPerFETTM Power MOSFET IXFT32N100XHV IXFH32N100X IXFK32N100X VDSS = ID25 = RDS(on) 1000V 32A 220m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247 & TO-264P) TO-268HV TO-247 TO-264P Maximum Ratings 1000 1000 V V 30 V 40 V 32 A 64 A 16 A 2J 50 V/ns 890 W -55 ... +150 150 -55 ... +150 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.in 4g 6g 10 g TO-268HV (IXFT..HV) TO-247 (IXFH) G S D (Tab) GDS TO-264P (IXFK) D (Tab) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features  International Standard Packages  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 ©2019 IXYS CORPORATION, All Rights Reserved. Characteristic Values Min. Typ. Max. 1000 V 3.5 6.0 V 100 nA 50 A 3 mA 220 m Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mo...