Power MOSFET. IXFT32N100XHV Datasheet

IXFT32N100XHV MOSFET. Datasheet pdf. Equivalent

IXFT32N100XHV Datasheet
Recommendation IXFT32N100XHV Datasheet
Part IXFT32N100XHV
Description Power MOSFET
Feature IXFT32N100XHV; Preliminary Technical Information X-Class HiPerFETTM Power MOSFET IXFT32N100XHV IXFH32N100X IXFK32.
Manufacture IXYS
Datasheet
Download IXFT32N100XHV Datasheet





IXYS IXFT32N100XHV
Preliminary Technical Information
X-Class HiPerFETTM
Power MOSFET
IXFT32N100XHV
IXFH32N100X
IXFK32N100X
VDSS =
ID25 =
RDS(on)
1000V
32A
220m
N-Channel Enhancement Mode
Avalanche Rated
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247 & TO-264P)
TO-268HV
TO-247
TO-264P
Maximum Ratings
1000
1000
V
V
30 V
40 V
32 A
64 A
16 A
2J
50 V/ns
890 W
-55 ... +150
150
-55 ... +150
C
C
C
300 °C
260 °C
1.13 / 10
Nm/lb.in
4g
6g
10 g
TO-268HV
(IXFT..HV)
TO-247
(IXFH)
G
S
D (Tab)
GDS
TO-264P
(IXFK)
D (Tab)
G
D
S
G = Gate
S = Source
D (Tab)
D = Drain
Tab = Drain
Features
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
©2019 IXYS CORPORATION, All Rights Reserved.
Characteristic Values
Min. Typ.
Max.
1000
V
3.5 6.0 V
100 nA
50 A
3 mA
220 m
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
DS100906C(4/19)



IXYS IXFT32N100XHV
IXFT32N100XHV
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
RGi
Ciss
Coss
Crss
Co(er)
Co(tr)
VDS = 20V, ID = 16A, Note 1
Gate Input Resistance
VGS = 0V, VDS = 25V, f = 1MHz
Effective Output Capacitance
Energy related
Time related
VVGDSS
=
=
0V
0.8
VDSS
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2(External)
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25
TO-247
TO-264P
Characteristic Values
Min. Typ. Max
14 23
0.6
4075
520
10
S
pF
pF
pF
140
585
29
12
80
12
130
27
70
0.21
0.15
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.14 C/W
C/W
C/W
IXFH32N100X
IXFK32N100X
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, pulse Width Limited by TJM
VSD IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 16A, -di/dt = 100A/μs
VR = 100V
Characteristic Values
Min. Typ. Max
32
A
128 A
1.4 V
200 ns
1.5 μC
15 A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537



IXYS IXFT32N100XHV
Fig. 1. Output Characteristics @ TJ = 25oC
32
VGS = 10V
28 8V
24
7V
20
16
12
8 6V
4
5V
0
0123456789
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125oC
32
VGS = 10V
28 8V
7V
24
20
16 6V
12
8
5V
4
4V
0
0 5 10 15 20
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 16A Value vs.
Drain Current
5.0
4.5 VGS = 10V
4.0
3.5
TJ = 125oC
3.0
2.5
2.0
TJ = 25oC
1.5
1.0
0.5
0
10 20 30 40 50 60
ID - Amperes
25
70
IXFT32N100XHV IXFH32N100X
IXFK32N100X
Fig. 2. Extended Output Characteristics @ TJ = 25oC
80
VGS = 10V
70 9V
60
50 8V
40
30
7V
20
10
0
0
6V
5V
10 20 30 40 50 60
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 16A Value vs.
Junction Temperature
4.2
3.8 VGS = 10V
3.4
3.0
2.6 I D = 32A
2.2
1.8 I D = 16A
1.4
1.0
0.6
0.2
-50
-25
0 25 50 75 100
TJ - Degrees Centigrade
125
150
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
1.3
1.2
1.1 BVDSS
1.0
0.9
0.8
VGS(th)
0.7
0.6
-60 -40 -20
0 20 40 60 80 100 120 140 160
TJ - Degrees Centigrade
©2019 IXYS CORPORATION, All Rights Reserved.





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