power MOSFET. SCT3080ALHR Datasheet

SCT3080ALHR MOSFET. Datasheet pdf. Equivalent

SCT3080ALHR Datasheet
Recommendation SCT3080ALHR Datasheet
Part SCT3080ALHR
Description Automotive Grade N-channel SiC power MOSFET
Feature SCT3080ALHR; SCT3080ALHR Automotive Grade N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID*1 PD 650.
Manufacture ROHM
Datasheet
Download SCT3080ALHR Datasheet




ROHM SCT3080ALHR
SCT3080ALHR
Automotive Grade N-channel SiC power MOSFET
Datasheet
VDSS
RDS(on) (Typ.)
ID*1
PD
650V
80mΩ
30A
134W
lOutline
TO-247N
lInner circuit
(1)(2)(3)
lFeatures
1) Qualified to AEC-Q101
2) Low on-resistance
3) Fast switching speed
4) Fast reverse recovery
5) Easy to parallel
6) Simple to drive
7) Pb-free lead plating ; RoHS compliant
lApplication
Automobile
Switch mode power supplies
(1) Gate
(2) Drain
(3) Source
*Body Diode
Please note Driver Source and Power Source are
not exchangeable. Their exchange might lead to
malfunction.
lPackaging specifications
Packing
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Tube
-
-
30
C11
SCT3080AL
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source Voltage
Continuous Drain current
Tc = 25°C
Tc = 100°C
Pulsed Drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (tsurge < 300nsec)
Recommended drive voltage
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
VGSS_surge*3
VGS_op*4
Tj
Tstg
Value
650
30
21
75
-4 to +22
-4 to +26
0 / +18
175
-55 to +175
Unit
V
A
A
A
V
V
V
°C
°C
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
1/12
TSQ50211-SCT3080ALHR
16.Nov.2018 - Rev.001



ROHM SCT3080ALHR
SCT3080ALHR
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
VGS = 0V, ID = 1mA
V(BR)DSS Tj = 25°C
Tj = -55°C
Zero Gate voltage
Drain current
VGS = 0V, VDS =650V
IDSS Tj = 25°C
Tj = 150°C
Gate - Source leakage current IGSS+ VGS = +22V , VDS = 0V
Gate - Source leakage current IGSS- VGS = -4V , VDS = 0V
Gate threshold voltage
VGS (th) VDS = 10V, ID = 5mA
Static Drain - Source
on - state resistance
VGS = 18V, ID = 10A
RDS(on) *5 Tj = 25°C
Tj = 150°C
Gate input resistance
RG f = 1MHz, open drain
Values
Min. Typ. Max.
650 -
650 -
-
-
- 1 10
-2-
- - 100
- - -100
2.7 - 5.6
- 80 104
- 115 -
- 13 -
Unit
V
μA
nA
nA
V
Ω
lThermal resistance
Parameter
Thermal resistance, junction - case
Symbol
RthJC
Values
Min. Typ. Max.
- 0.86 1.12
Unit
°C/W
lTypical Transient Thermal Characteristics
Symbol
Value
Unit
Rth1 1.17E-01
Rth2
7.29E-01
K/W
Rth3 1.30E-02
Symbol
Cth1
Cth2
Cth3
Value
6.82E-04
5.28E-03
6.78E-01
Unit
Ws/K
Tj Rth1
Rth,n
Tc
PD
Cth1
Cth2
Cth,n
Ta
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/12
TSQ50211-SCT3080ALHR
16.Nov.2018 - Rev.001



ROHM SCT3080ALHR
SCT3080ALHR
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Total Gate charge
Gate - Source charge
Gate - Drain charge
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Turn - on switching loss
Turn - off switching loss
gfs *5 VDS = 10V, ID = 10A
Ciss VGS = 0V
Coss VDS = 500V
Crss f = 1MHz
VGS = 0V
Co(er)
VDS = 0V to 300V
Qg *5
Qgs *5
Qgd *5
VDS = 300V
ID = 10A
VGS = 18V
See Fig. 1-1.
td(on) *5
tr *5
VDS = 300V
ID = 10A
VGS = 0V/+18V
td(off) *5
tf *5
RG =
RL = 30Ω
See Fig. 1-1, 1-2.
Eon *5
Eoff *5
VDS = 300V
VGS=0V/18V, ID = 10A
RG = 0Ω, L = 500μH
Eon includes diode
reverse recovery
Lσ = 50nH, Cσ = 200pF
See Fig. 2-1, 2-2.
Datasheet
Values
Min. Typ. Max.
- 3.8 -
- 571 -
- 39 -
- 19 -
Unit
S
pF
- 99 - pF
- 48 -
- 10 - nC
- 25 -
- 16 -
- 26 -
ns
- 27 -
- 16 -
- 41 -
μJ
- 15 -
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
3/12
TSQ50211-SCT3080ALHR
16.Nov.2018 - Rev.001





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