power MOSFET. SCT3160KLHR Datasheet

SCT3160KLHR MOSFET. Datasheet pdf. Equivalent

SCT3160KLHR Datasheet
Recommendation SCT3160KLHR Datasheet
Part SCT3160KLHR
Description Automotive Grade N-channel SiC power MOSFET
Feature SCT3160KLHR; SCT3160KLHR Automotive Grade N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID*1 PD 120.
Manufacture ROHM
Datasheet
Download SCT3160KLHR Datasheet





ROHM SCT3160KLHR
SCT3160KLHR
Automotive Grade N-channel SiC power MOSFET
Datasheet
VDSS
RDS(on) (Typ.)
ID*1
PD
1200V
160mΩ
17A
103W
lOutline
TO-247N
lInner circuit
(1)(2)(3)
lFeatures
1) Qualified to AEC-Q101
2) Low on-resistance
3) Fast switching speed
4) Fast reverse recovery
5) Easy to parallel
6) Simple to drive
7) Pb-free lead plating ; RoHS compliant
lApplication
Automobile
Switch mode power supplies
(1) Gate
(2) Drain
(3) Source
*Body Diode
Please note Driver Source and Power Source are
not exchangeable. Their exchange might lead to
malfunction.
lPackaging specifications
Packing
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Tube
-
-
30
C11
SCT3160KL
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source Voltage
Continuous Drain current
Tc = 25°C
Tc = 100°C
Pulsed Drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (tsurge < 300nsec)
Recommended drive voltage
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
VGSS_surge*3
VGS_op*4
Tj
Tstg
Value
1200
17
12
42
-4 to +22
-4 to +26
0 / +18
175
-55 to +175
Unit
V
A
A
A
V
V
V
°C
°C
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
1/12
TSQ50211-SCT3160KLHR
16.Nov.2018 - Rev.001



ROHM SCT3160KLHR
SCT3160KLHR
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
VGS = 0V, ID = 1mA
V(BR)DSS Tj = 25°C
Tj = -55°C
Zero Gate voltage
Drain current
VGS = 0V, VDS =1200V
IDSS Tj = 25°C
Tj = 150°C
Gate - Source leakage current IGSS+ VGS = +22V , VDS = 0V
Gate - Source leakage current IGSS- VGS = -4V , VDS = 0V
Gate threshold voltage
VGS (th) VDS = 10V, ID = 2.5mA
Static Drain - Source
on - state resistance
VGS = 18V, ID = 5A
RDS(on) *5 Tj = 25°C
Tj = 150°C
Gate input resistance
RG f = 1MHz, open drain
Min.
1200
1200
-
-
-
-
2.7
-
-
-
Values
Typ.
-
-
1
2
-
-
-
160
272
18
Max.
-
-
10
-
100
-100
5.6
208
-
-
Unit
V
μA
nA
nA
V
Ω
lThermal resistance
Parameter
Thermal resistance, junction - case
Symbol
RthJC
Values
Min. Typ. Max.
- 1.12 1.46
Unit
°C/W
lTypical Transient Thermal Characteristics
Symbol
Value
Unit
Rth1 1.11E-01
Rth2
7.09E-01
K/W
Rth3 3.01E-01
Symbol
Cth1
Cth2
Cth3
Value
8.73E-04
5.10E-03
2.94E-02
Unit
Ws/K
Tj Rth1
Rth,n
Tc
PD
Cth1
Cth2
Cth,n
Ta
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/12
TSQ50211-SCT3160KLHR
16.Nov.2018 - Rev.001



ROHM SCT3160KLHR
SCT3160KLHR
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Total Gate charge
Gate - Source charge
Gate - Drain charge
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Turn - on switching loss
Turn - off switching loss
gfs *5 VDS = 10V, ID = 5A
Ciss VGS = 0V
Coss VDS = 800V
Crss f = 1MHz
VGS = 0V
Co(er)
VDS = 0V to 600V
Qg *5
Qgs *5
Qgd *5
VDS = 600V
ID = 5A
VGS = 18V
See Fig. 1-1.
td(on) *5
tr *5
VDS = 400V
ID = 5A
VGS = 0V/+18V
td(off) *5
tf *5
RG =
RL = 80Ω
See Fig. 1-1, 1-2.
Eon *5
Eoff *5
VDS = 600V
VGS=0V/18V, ID = 5A
RG = 0Ω, L = 750μH
Eon includes diode
reverse recovery
Lσ = 50nH, Cσ = 200pF
See Fig. 2-1, 2-2.
Datasheet
Values
Min. Typ. Max.
- 2.5 -
- 398 -
- 41 -
- 18 -
Unit
S
pF
- 45 - pF
- 42 -
- 10 - nC
- 22 -
- 14 -
- 18 -
ns
- 24 -
- 25 -
- 62 -
μJ
- 12 -
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
3/12
TSQ50211-SCT3160KLHR
16.Nov.2018 - Rev.001





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