SCT3120ALHR

SCT3120ALHR Automotive Grade N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID*1 PD 650V 120mΩ 21A 103W lOutline TO-247N lInner circuit (1) (2) (3) lFeatures 1) Qualified to AEC-Q101 2) Low on-resistance 3) Fast switching speed 4) Fast reverse recovery 5) Easy to parallel 6) Simple to drive 7) Pb-free lead plating ; RoHS compliant lApplication ・Automobile ・Switch mode power supplies (1) Gate (2) Drain (3) Source *Body Diode Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. lPackaging specifications Packing Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 30 C11 SCT3120AL lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified) Parameter Symbol Drain - Source Voltage Continuous Drain current Pulsed Drain current (Tc = 25°C) Gate - Source voltage (DC) Tc = 25°C Tc = 100°C Gate - Source surge voltage (tsurge < 300nsec) Recommended drive voltage Virtual Junction temperature VDSS ID *1 ID *1 ID,pulse *2 VGSS VGSS_surge*3 VGS_op*4 Tvj Range of storage temperature Tstg Value Unit 650 V 21 A 15 A 52 A -4 to +22 V -4 to +26 V 0 / +18 V 175 °C -55 to +175 °C www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/15 TSQ50211-SCT3120ALHR 13.Nov.2022 - Rev.002 SCT3120ALHR Datasheet lElectrical characteristics (Tvj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. VGS =...