SILICON BIDIRECTIONAL THYRISTORS
2N6151-2N6153
High-reliability discrete products and engineering services since 1977
SILICON BIDIRECTIONAL THYRISTORS
...
Description
2N6151-2N6153
High-reliability discrete products and engineering services since 1977
SILICON BIDIRECTIONAL THYRISTORS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Repetitive Peak Off-Stage Voltage, Gate Open 2N6151 2N6152 2N6153
VDRM
200 400 600
Unit Volts
RMS On-State Current (TC = 80°C) Peak Non-Repetitive Surge Current (One Cycle, 60Hz) Circuit Fusing Considerations (t = 8.3ms)
IT(RMS) ITSM
I2t
10 Amps 100 Amps
A2s 60
Peak Gate Power (TJ = 75°C, pulse width = 2.0µs) Average Gate Power (TJ = 75°C, t = 8.3ms) Peak Gate Current (pulse width = 10µs) Peak Gate Voltage Operating Junction Temperature Range Storage Temperature Range
PGM PG(AV) IGM VGM
TJ Tstg
20 0.5 2.0 10 -40 to +100 -40 to +150
Watts Watts Amps Volts
°C °C
THERMAL CHARACTERISTICS...
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