(PDF) 2N3904 Datasheet PDF | SeCoS





2N3904 Datasheet PDF

Part Number 2N3904
Description NPN General Purpose Transistor
Manufacture SeCoS
Total Page 3 Pages
PDF Download Download 2N3904 Datasheet PDF

Features: Datasheet pdf Elektronische Bauelemente 2N3904 0.2A, 60V NPN General Purpose Transistor RoH S Compliant Product A suffix of “-C specifies halogen and lead free FEAT URES Power Dissipation PCM: 625mW (Ta=2 5°C) Collector Current ICM: 200mA Coll ector – Base Voltage V(BR)CBO: 60V C LASSIFICATION OF hFE(1) Product-Rank 2N3904-O Range 100~200 2N3904-Y 200~ 300 2N3904-G 300~400 TO-92 GH J AD B K E CF 1Emitter 2Base 3Collector REF . A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 T YP. 1.10 - 2.42 2.66 0.36 0.76 Col lector 3 2 Base 1 Emitter ABSOLUTE M AXIMUM RATINGS (Ta = 25°C unless other wise specified) Parameter Symbol Rat ings Collector - Base Voltage Collecto r - Emitter Voltage Emitter - Base Volt age Collector Current -Continuous Cplle ctor Power Dissipation Junction, Storag e Temperature VCBO VCEO VEBO IC PC TJ, TSTG 60 40 6 0.2 625 +150, -55 ~ +150 Unit V V V A mW °C ELECTRICAL CHARACTERISTICS (Ta = 25°C u.

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2N3904 datasheet
Elektronische Bauelemente
2N3904
0.2A, 60V
NPN General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Power Dissipation PCM: 625mW (Ta=25°C)
Collector Current ICM: 200mA
Collector – Base Voltage V(BR)CBO: 60V
CLASSIFICATION OF hFE(1)
Product-Rank
2N3904-O
Range
100~200
2N3904-Y
200~300
2N3904-G
300~400
TO-92
GH
J
AD
B
K
E CF
1Emitter
2Base
3Collector
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector
3
2
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current -Continuous
Cpllector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
60
40
6
0.2
625
+150, -55 ~ +150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter - Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
V(BR)CBO
60
-
-
V(BR)CEO
40
-
-
V(BR)EBO
6
-
-
ICBO
-
- 0.1
ICEO 0.1
IEBO
-
- 0.1
hFE(1)
100
-
400
hFE(2)
60
-
-
VCE(sat)
-
- 0.3
VBE(sat)
-
- 0.95
fT 300 -
-
Unit
V
V
V
µA
µA
µA
V
V
MHz
Test Conditions
IC=10µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=60V, IE=0
VCE=40V, IB=0
VEB =5V, IC=0
VCE=1V, IC=10mA
VCE=1V, IC=50mA
IC=50mA, IB=5mA
IC=50mA, IB=5mA
VCE=20V, IC=10mA, f=100MHz
http://www.SeCoSGmbH.com/
31-Dec-2010 Rev.B
Any changes of specification will not be informed individually.
Page 1 of 3

2N3904 datasheet
Elektronische Bauelemente
CHARACTERISTIC CURVES
2N3904
0.2A, 60V
NPN General Purpose Transistor
http://www.SeCoSGmbH.com/
31-Dec-2010 Rev.B
Any changes of specification will not be informed individually.
Page 2 of 3





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