(Datasheet) V12P12 data sheet PDF





V12P12 Datasheet, High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

V12P12   V12P12  

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www.vishay.com V12P12 Vishay General Se miconductor High Current Density Surfa ce Mount Trench MOS Barrier Schottky Re ctifier Ultra Low VF = 0.51 V at IF = 6 A TMBS® eSMP® Series K 1 2 SMPC ( TO-277A) K Cathode Anode 1 Anode 2 F EATURES • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MO S Schottky technology • Low forward

V12P12 Datasheet, High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

V12P12   V12P12  
voltage drop, low power losses • Hig h efficiency operation • Meets MSL l evel 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified avai lable - Automotive ordering code; ba se P/NHM3 • Material categorization: for definitions of compliance please s ee www.vishay.com/doc?99912 DESIGN SUP PORT TOOLS click logo to get started M odels Available PRIMARY CHARACTERISTIC








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