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Schottky Rectifier. V20200C-E3 Datasheet

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Schottky Rectifier. V20200C-E3 Datasheet






V20200C-E3 Rectifier. Datasheet pdf. Equivalent




V20200C-E3 Rectifier. Datasheet pdf. Equivalent





Part

V20200C-E3

Description

Dual High Voltage Trench MOS Barrier Schottky Rectifier



Feature


V20200C-E3, VF20200C-E3, VB20200C-E3, VI 20200C-E3 www.vishay.com Vishay Gener al Semiconductor Dual High Voltage Tre nch MOS Barrier Schottky Rectifier Ultr a Low VF = 0.60 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20200C 3 2 1 P IN 1 PIN 2 PIN 3 CASE D2PAK (TO-263 AB) K VF20200C 1 2 3 PIN 1 PIN 2 PI N 3 TO-262AA K 2 1 VB20200C PIN 1 K PIN 2 HEATSINK .
Manufacture

Vishay

Datasheet
Download V20200C-E3 Datasheet


Vishay V20200C-E3

V20200C-E3; DESIGN SUPPORT TOOLS 3 VI20200C 2 1 PIN 1 PIN 2 PIN 3 K click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package 2 x 10 A 20 0 V 120 A 0.68 V 150 °C TO-220AB, ITO- 220AB, D2PAK (TO-263AB), TO-262AA Circ uit configuration Common cathode FEAT URES • Trench MOS Schottky technology • Low forward voltag.


Vishay V20200C-E3

e drop, low power losses • High effici ency operation • Low thermal resistan ce • Meets MSL level 1, per J-STD-020 , LF maximum peak of 245 °C (for TO-26 3AB package) • Solder bath temperatur e 275 °C maximum, 10 s, per JESD 22-B1 06 (for TO-220AB, I .


Vishay V20200C-E3

.

Part

V20200C-E3

Description

Dual High Voltage Trench MOS Barrier Schottky Rectifier



Feature


V20200C-E3, VF20200C-E3, VB20200C-E3, VI 20200C-E3 www.vishay.com Vishay Gener al Semiconductor Dual High Voltage Tre nch MOS Barrier Schottky Rectifier Ultr a Low VF = 0.60 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20200C 3 2 1 P IN 1 PIN 2 PIN 3 CASE D2PAK (TO-263 AB) K VF20200C 1 2 3 PIN 1 PIN 2 PI N 3 TO-262AA K 2 1 VB20200C PIN 1 K PIN 2 HEATSINK .
Manufacture

Vishay

Datasheet
Download V20200C-E3 Datasheet




 V20200C-E3
V20200C-E3, VF20200C-E3, VB20200C-E3, VI20200C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.60 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20200C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
D2PAK (TO-263AB)
K
VF20200C 1 2 3
PIN 1
PIN 2
PIN 3
TO-262AA
K
2
1
VB20200C
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS
3
VI20200C
2
1
PIN 1
PIN 2
PIN 3
K
click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 10 A
TJ max.
Package
2 x 10 A
200 V
120 A
0.68 V
150 °C
TO-220AB, ITO-220AB,
D2PAK (TO-263AB), TO-262AA
Circuit configuration
Common cathode
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage
Max. average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per
diode
EAS
IRRM
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
dV/dt
VAC
TJ, TSTG
V20200C
VF20200C VB20200C
200
20
10
120
100
0.5
10 000
1500
-40 to +150
VI20200C
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 18-Jun-2018
1 Document Number: 89072
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 V20200C-E3
V20200C-E3, VF20200C-E3, VB20200C-E3, VI20200C-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage per diode (1)
IR = 1.0 mA
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
Reverse current per diode (2)
VR = 180 V
VR = 200 V
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF
IR
200 (min.)
0.85
1.21
0.60
0.68
6
3.6
-
5.6
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
1.60
-
0.76
-
-
150
18
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20200C
VF20200C
Typical thermal resistance per diode
RJC
2.8
5.0
VB20200C
2.8
VI20200C
2.8
UNIT
V
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20200C-E3/4W
1.88
ITO-220AB
VF20200C-E3/4W
1.75
TO-263AB
VB20200C-E3/4W
1.37
TO-263AB
VB20200C-E3/8W
1.37
TO-262AA
VI20200C-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
25
Resistive or Inductive Load
20
V20200C
15
VF20200C
10
5
0
0
25 50
75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
9
D = 0.8
8 D = 0.5
D = 0.3
7 D = 0.2
6 D = 0.1
D = 1.0
5
4
3T
2
1
D = tp/T
tp
0
0 2 4 6 8 10 12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 18-Jun-2018
2 Document Number: 89072
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 V20200C-E3
V20200C-E3, VF20200C-E3, VB20200C-E3, VI20200C-E3
www.vishay.com
Vishay General Semiconductor
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
10 TA = 150 °C
TA = 125 °C
1
TA = 100 °C
0.1
0.01
0.001
TA = 25 °C
0.0001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
Junction to Case
1
0.01
V20200C
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
10
Junction to Case
1
0.01
VF20200C
0.1 1 10
t - Pulse Duration (s)
100
Fig. 7 - Typical Transient Thermal Impedance Per Diode
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
Revision: 18-Jun-2018
3 Document Number: 89072
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000






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