Document
V40150C-E3, VF40150C-E3, VB40150C-E3, VI40150C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V40150C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
D2PAK (TO-263AB)
K
123 VF40150C
PIN 1
PIN 2
PIN 3
TO-262AA K
2
1 VB40150C
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS
3
VI40150C
2 1
PIN 1
PIN 2
PIN 3
K
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Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A TJ max.
Package
2 x 20 A 150 V 160 A 0.75 V 150 °C
TO-220AB, ITO-220AB, D2PAK (TO-263AB), TO-262AA
Circuit configuration
Common cathode
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses • High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA packag.