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LDO Regulator. NCP170 Datasheet

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LDO Regulator. NCP170 Datasheet






NCP170 Regulator. Datasheet pdf. Equivalent




NCP170 Regulator. Datasheet pdf. Equivalent





Part

NCP170

Description

150mA CMOS LDO Regulator



Feature


LDO Regulator Ultra‐Low IQ, CMOS 150 m A NCP170 The NCP170 series of CMOS low dropout regulators are designed specif ically for portable battery-powered app lications which require ultra-low quies cent current. The ultra-low consumption of typ. 500 nA ensures long battery li fe and dynamic transient boost feature improves device transient response for wireless communicati.
Manufacture

ON Semiconductor

Datasheet
Download NCP170 Datasheet


ON Semiconductor NCP170

NCP170; on applications. The device is available in small 1 Γ— 1 mm XDFN4, SOT-563 and TSOP-5 packages. Features β€’ Operating Input Voltage Range: 2.2 V to 5.5 V β€ ’ Output Voltage Range: 1.2 V to 3.6 V (0.1 V Steps) β€’ Ultra-Low Quiescent C urrent Typ. 0.5 mA β€’ Low Dropout: 170 mV Typ. at 150 mA β€’ High Output Volt age Accuracy Β±1% β€’ Stable with Ceram ic Capacitors 1 mF β€’ Over-Curren.


ON Semiconductor NCP170

t Protection β€’ Thermal Shutdown Protec tion β€’ NCP170A for Active Discharge O ption β€’ Available in Small 1 Γ— 1 mm XDFN4, SOTβˆ’563 and TSOP-5 Packages β€ ’ These Devices are Pbβˆ’Free, Halogen Free/BFR Free and are RoHS Compliant Ty pical Applications β€’ Battery Powered Equipments β€’ Portable Communication E quipments β€’ Cameras, Image Sensors an d Camcorders VIN CIN 1 mF IN OUT NC.


ON Semiconductor NCP170

P170 EN GND COUT VOUT 1 mF Figure 1. Typical Application Schematic www.onse mi.com 1 XDFN4 MX SUFFIX CASE 711AJ 6 1 SOTβˆ’563 XV SUFFIX CASE 463A 5 1 T SOPβˆ’5 SN SUFFIX CASE 483 MARKING DIA GRAMS XDFN4 XX M 1 XX = Specific Device Code M = Date Code SOTβˆ’563 XX MG 1 XX = Specific Device Code M = Month Cod e G = Pb-Free Package *Pb-Free indicato r, β€œG” or microdot β€œG”, .

Part

NCP170

Description

150mA CMOS LDO Regulator



Feature


LDO Regulator Ultra‐Low IQ, CMOS 150 m A NCP170 The NCP170 series of CMOS low dropout regulators are designed specif ically for portable battery-powered app lications which require ultra-low quies cent current. The ultra-low consumption of typ. 500 nA ensures long battery li fe and dynamic transient boost feature improves device transient response for wireless communicati.
Manufacture

ON Semiconductor

Datasheet
Download NCP170 Datasheet




 NCP170
LDO Regulator -
Ultra‐Low IQ, CMOS
150 mA
NCP170
The NCP170 series of CMOS low dropout regulators are designed
specifically for portable battery-powered applications which require
ultra-low quiescent current. The ultra-low consumption of typ. 500 nA
ensures long battery life and dynamic transient boost feature improves
device transient response for wireless communication applications.
The device is available in small 1 Γ— 1 mm XDFN4, SOT-563 and
TSOP-5 packages.
Features
β€’ Operating Input Voltage Range: 2.2 V to 5.5 V
β€’ Output Voltage Range: 1.2 V to 3.6 V (0.1 V Steps)
β€’ Ultra-Low Quiescent Current Typ. 0.5 mA
β€’ Low Dropout: 170 mV Typ. at 150 mA
β€’ High Output Voltage Accuracy Β±1%
β€’ Stable with Ceramic Capacitors 1 mF
β€’ Over-Current Protection
β€’ Thermal Shutdown Protection
β€’ NCP170A for Active Discharge Option
β€’ Available in Small 1 Γ— 1 mm XDFN4, SOTβˆ’563 and TSOP-5
Packages
β€’ These Devices are Pbβˆ’Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
β€’ Battery Powered Equipments
β€’ Portable Communication Equipments
β€’ Cameras, Image Sensors and Camcorders
VIN
CIN 1 mF
IN OUT
NCP170
EN
GND
COUT
VOUT
1 mF
Figure 1. Typical Application Schematic
www.onsemi.com
1
XDFN4
MX SUFFIX
CASE 711AJ
6
1
SOTβˆ’563
XV SUFFIX
CASE 463A
5
1
TSOPβˆ’5
SN SUFFIX
CASE 483
MARKING DIAGRAMS
XDFN4
XX M
1
XX = Specific Device Code
M = Date Code
SOTβˆ’563
XX MG
1
XX = Specific Device Code
M = Month Code
G = Pb-Free Package
*Pb-Free indicator, β€œG” or microdot β€œG”,
may or may not be present.
TSOPβˆ’5
5
XXXAYWG
G
1
XXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pbβˆ’Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 21 of this data sheet.
Β© Semiconductor Components Industries, LLC, 2017
February, 2020 βˆ’ Rev. 21
1
Publication Order Number:
NCP170/D




 NCP170
NCP170
PIN FUNCTION DESCRIPTION
Pin No.
XDFN4
Pin No.
SOTβˆ’563
Pin No.
TSOPβˆ’5
411
222
363
135
EPAD
βˆ’
βˆ’
βˆ’44
βˆ’5βˆ’
Pin Name
IN
GND
EN
OUT
EPAD
NC
GND
Description
Power Supply Input Voltage
Power Supply Ground
Chip Enable Pin (Active β€œH”)
Output Pin
Internally Connected to GND
No Connect
Power Supply Ground
ABSOLUTE MAXIMUM RATINGS
Symbol
Rating
Value
Unit
VIN Input Voltage (Note 1)
6.0 V
VOUT
Output Voltage
βˆ’0.3 to VIN + 0.3
V
VCE Chip Enable Input
βˆ’0.3 to 6.0
V
TJ(MAX)
Maximum Junction Temperature
150 Β°C
TSTG
Storage Temperature
βˆ’55 to 150
Β°C
ESDHBM
ESD Capability, Human Body Model (Note 2)
2000
V
ESDMM
ESD Capability, Machine Model (Note 2)
200 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC-Q100-002 (EIA/JESD22-A114)
ESD Machine Model tested per AEC-Q100-003 (EIA/JESD22-A115)
Latchup Current Maximum Rating tested per JEDEC standard: JESD78
THERMAL CHARACTERISTICS
Symbol
Rating
RqJA
Thermal Characteristics, Thermal Resistance, Junction-to-Air
XDFN4 1 Γ— 1 mm
SOTβˆ’563
TSOPβˆ’5
Value
250
200
250
Unit
Β°C/W
Figure 2. Simplified Block Diagram
www.onsemi.com
2




 NCP170
NCP170
ELECTRICAL CHARACTERISTICS βˆ’ VOLTAGE VERSION 1.2 V
(βˆ’40Β°C ≀ TJ ≀ 85Β°C; VIN = 2.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25Β°C.) (Note 3)
Symbol
Parameter
Test Conditions
Min Typ Max Unit
VIN
VOUT
LineReg
LoadReg
VDO
IOUT
ISC
IQ
ISTB
VENH
VENL
IEN
PSRR
VNOISE
RLOW
Operating Input Voltage
Output Voltage
Line Regulation
Load Regulation
Dropout Voltage
Output Current
Short Circuit Current Limit
Quiescent Current
Standby Current
EN Pin Threshold Voltage
EN Pin Threshold Voltage
EN Pin Current
Power Supply Rejection Ratio
Output Noise Voltage
Active Output Discharge
Resistance (A option only)
TA = +25Β°C
βˆ’40Β°C ≀ TJ ≀ 85Β°C
2.5 V < VIN ≀ 5.5 V, IOUT = 1 mA
0 mA < IOUT ≀ 150 mA, VIN = 2.5 V
(Note 4)
(Note 5)
VOUT = 0 V
IOUT = 0 mA
VEN = 0 V, TJ = 25Β°C
EN Input Voltage β€œH”
EN Input Voltage β€œL”
VEN ≀ VIN ≀ 5.5 V (Note 6)
f = 1 kHz, VIN = 2.2 V + 200 mVpp Modulation
IOUT = 150 mA
IOUT = 10 mA
VIN = 5.5 V, IOUT = 1 mA,
f = 100 Hz to 1 MHz, COUT = 1 mF
VIN = 5.5 V, VEN = 0 V (Note 6)
2.2 βˆ’ 5.5 V
1.188 1.2 1.212
V
1.176 1.2 1.224
βˆ’ 0.05 0.20 %/V
βˆ’20 1
20 mV
βˆ’ βˆ’ βˆ’ mV
150 βˆ’
βˆ’ mA
βˆ’ 225 βˆ’ mA
βˆ’ 0.5 0.9 mA
βˆ’ 0.1 0.5 mA
1.2 βˆ’ βˆ’ V
βˆ’ βˆ’ 0.4 V
βˆ’ 10 βˆ’ nA
dB
βˆ’ 57 βˆ’
βˆ’ 63 βˆ’
βˆ’ 85 βˆ’ mVrms
βˆ’ 100 βˆ’
W
TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25Β°C
(Note 6)
βˆ’ 175 βˆ’
Β°C
TSDH
Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 6)
βˆ’ 25 βˆ’ Β°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at
TJ = TA = 25Β°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
4. Not Characterized at VIN = 2.2 V, VOUT = 1.2 V, IOUT = 150 mA.
5. Respect SOA.
6. Guaranteed by design and characterization.
www.onsemi.com
3



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