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Thyristors. MCR25NG Datasheet

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Thyristors. MCR25NG Datasheet






MCR25NG Thyristors. Datasheet pdf. Equivalent




MCR25NG Thyristors. Datasheet pdf. Equivalent





Part

MCR25NG

Description

Thyristors



Feature


Thyristors Surface Mount – 400V - 800V > MCR25DG, MCR25MG, MCR25NG MCR25DG, MCR25MG, MCR25NG Pb Description Desig ned primarily for half-wave ac control applications, such as motor controls, h eating controls, and power supplies; or wherever half−wave, silicon gate−c ontrolled devices are needed. Pin Out Features • Blocking Voltage to 800 Volts • On−State Current .
Manufacture

Littelfuse

Datasheet
Download MCR25NG Datasheet


Littelfuse MCR25NG

MCR25NG; Rating of 25 Amperes RMS • High Surge Current Capability − 300 Amperes • Rugged Economical TO−220AB Package • Glass Passivated Junctions for Rel iability and Uniformity • Minimum an d Maximum Values of IGT, VGT, and IH Sp ecified for Ease of Design • High Im munity to dv/dt − 100 V/sec Minimum a t 125°C • These are Pb−Free Devic es CASE 221A STYLE 4 12 Functional Di.


Littelfuse MCR25NG

agram A Additional Information G K Dat asheet Resources Samples © 2019 Lit telfuse, Inc. Specifications are subjec t to change without notice. Revised: 02 /28/19 Thyristors Surface Mount – 40 0V - 800V > MCR25DG, MCR25MG, M .


Littelfuse MCR25NG

.

Part

MCR25NG

Description

Thyristors



Feature


Thyristors Surface Mount – 400V - 800V > MCR25DG, MCR25MG, MCR25NG MCR25DG, MCR25MG, MCR25NG Pb Description Desig ned primarily for half-wave ac control applications, such as motor controls, h eating controls, and power supplies; or wherever half−wave, silicon gate−c ontrolled devices are needed. Pin Out Features • Blocking Voltage to 800 Volts • On−State Current .
Manufacture

Littelfuse

Datasheet
Download MCR25NG Datasheet




 MCR25NG
Thyristors
Surface Mount – 400V - 800V > MCR25DG, MCR25MG, MCR25NG
MCR25DG, MCR25MG, MCR25NG
Pb
Description
Designed primarily for half-wave ac control applications,
such as motor controls, heating controls, and power
supplies; or wherever half−wave, silicon gate−controlled
devices are needed.
Pin Out
Features
• Blocking Voltage to 800 Volts
• On−State Current Rating of 25 Amperes RMS
• High Surge Current Capability − 300 Amperes
• Rugged Economical TO−220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT, and IH Specified
for Ease of Design
• High Immunity to dv/dt − 100 V/sec Minimum at 125°C
• These are Pb−Free Devices
CASE 221A
STYLE 4
12
Functional Diagram
A
Additional Information
G
K
Datasheet
Resources
Samples
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/28/19




 MCR25NG
Thyristors
Surface Mount – 400V - 800V > MCR25DG, MCR25MG, MCR25NG
Maximum Ratings (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(− 40 to 125°C, Sine Wave, 50 to 60 Hz,
Gate Open)
MCR25DG
MCR25MG
MCR25NG
VVDRRRMM,
400
600
800
V
On-State RMS Current (180º Conduction Angles; TC = 80°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
IT (RMS)
ITSM
I2t
25
300
373
A
A
A²sec
Forward Peak Gate Power (Pulse Width ≤ 1.0 µsec,TC = 80°C)
Forward Average Gate Power (t = 8.3 msec, TC = 80°C)
Forward Peak Gate Current (Pulse Width ≤ 1.0 µsec, TC= 80°C)
Operating Junction Temperature Range
Storage Temperature Range
PGM
PGM (AV)
IGM
TJ
Tstg
20.0
0.5
2.0
-40 to 125
-40 to 150
W
W
A
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is
not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8" from Case for
10 Seconds
Symbol
RƟJC
RƟJA
TL
Value
1.5
62.5
260
Unit
°C/W
°C
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted)
Characteristic
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
Symbol
IIDRRRMM,
Min
-
-
Typ
-
-
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted)
Characteristic
Peak Forward On−State Voltage (Note 2) (ITM = 32 A)
Gate Trigger Current (Continuous dc) (VD = 12 V; RL = 100 Ω)
Holding Current (Anode Voltage = 12 V, Initiating Current = 200 mA)
Latch Current (VD = 12 V, IG = 30 mA)
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω
Symbol
VTM
IGT
IH
IL
VGT
Min
_
4.0
5.0
_
0.5
Typ
_
12
13
35
0.67
Max
1.8
30
40
80
1.0
Max
0.01
2.0
Unit
µA
Unit
V
mA
mA
mA
V
Dynamic Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125ºC)
dv/dt
100
250
V/µs
Critical Rate of Rise of On−State Current
(IPK = 50 A, Pw = 30 µsec, diG/dt = 1 A/µsec, Igt = 50 mA
di/dt
− 50 A/µs
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance
may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/28/19




 MCR25NG
Thyristors
Surface Mount – 400V - 800V > MCR25DG, MCR25MG, MCR25NG
Voltage Current Characteristic of SCR
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
+C urrent
IRRM at VRRM
on state
VTM
IH
Anode +
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
+V oltage
IDRM at VDRM
Forward Blocking Region
(off state)
Figure 1. Typical Gate Trigger Current vs Junction Temperature
Figure 2. Typical Gate Trigger Voltage vs Junction Temperature
Figure 3. Typical On−State Characteristics
Figure 4. Transient Thermal Response
1
Z JC(t) R JC R(t)
0.1
0.01
0.1
1
10 100
t, TIME (ms)
1000 1 104
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/28/19



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